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High Resolution X-ray Diffraction and X-ray Topography Study of Gan on A12O3
Published online by Cambridge University Press: 10 February 2011
Abstract
High resolution x-ray diffraction and x-ray topography study of GaN thin films, grown on sapphire (00.1) substrate by reduced pressure metalorganic vapor phase epitaxy under various conditions, were performed. An attempt was made to correlate the mobility in films with similar carrier concentration with the strain and dislocation density. X-ray topography revealed the defects present in the film.
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- Copyright © Materials Research Society 1998