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High Resolution Study of the Relationship Between Misfit Accommodation and Growth of CU2-xS in Cds

Published online by Cambridge University Press:  21 February 2011

T. Sands ,
J. Washburn  and
R. Gronsky
T. Sands
Affiliation:
Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
J. Washburn
Affiliation:
Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
R. Gronsky
Affiliation:
Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
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Abstract

The growth of CU2-xS in the (0001) basal face of single crystal cadmium sulfide has been studied with high resolution transmission electron microscopy (HRTEM) and diffraction. Cross-sectional Cu2-xS/CdS specimens and plan-view Cu2-xS separated films were prepared from heterojunctions formed by the aqueous conversion of CdS to topotaxial Cu2-xS. Low chalcocite films were found to form in two principal stages; 1) coalescence of low chalcocite islands and 2) an accelerated reaction localized at pores in the Cu2-xS film. Several possible misfit accommodation mechanisms involving twinning, cracking, and a second copper sulfide phase were identified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 31: Symposium N – Electron Microscopy of Materials , 1983 , 241
Copyright
Copyright © Materials Research Society 2006

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References

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