Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T02:31:30.060Z Has data issue: false hasContentIssue false
  • English
  • Français

High Resolution Observation and Image Simulation on Cleaved Wedges of III–V Semiconductors

Published online by Cambridge University Press:  21 February 2011

P.A. Buffat ,
J. D. Ganiere  and
P. Stadelmann
P.A. Buffat
Affiliation:
Institut de Micro-Optoélectronique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
J. D. Ganiere
Affiliation:
Institut Interdépartemental de Microscopie Electronique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
P. Stadelmann
Affiliation:
Institut de Micro-Optoélectronique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
Get access

Abstract

The observation of III–V multilayered semiconductors on 900 cleaved wedges is an interesting alternative to the conventional TEM observation on cross-sectioned samples. It offers a fast specimen preparation, the absence of ion irradiation damage or preferential etching, and a well controlled thickness across the sample. HREM observations are used to derive the layer thickness down to the atomic level. Image simulations were calculated with EMS programs on wedges described by a supercell.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 111
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bulle-Lieuwma, C.W.T. and Zalm, P. C., Suppression of Surface Topography Development in Ion-Milling of Semiconductors, in “Surface and Interface Analysis”, ECASIA 1986)Google Scholar
2. Chew, N.G. and Cullis, A. G., Ultramicroscopy 23, 175 (1987); A.G. Cullis, N.G. Chew and J.L. Hutchinson, Ultramicroscopy. 17, 203 (1985)Google Scholar
3. Kakibayashi, H. and Nagata, F., Jpn. J. Appl. Phys. 24, L905 (1985); H. Kakibayashi and F. Nagata, Jpn. J. Appl. Phys. 25, 1644 (1986)CrossRefGoogle Scholar
4. Hsu, T., lijima, S. and Cowley, J. M., Surf. Sci. 137, 551 (1984)Google Scholar
5. Stadelmann, P., Ultramicroscopy 21, 131 (1987)CrossRefGoogle Scholar
6. Doyle, P.A. and Turner, P.S., Acta Cryst. A 24, 390 (1968)CrossRefGoogle Scholar
7. Cowley, J.M. and Moodie, A.F., Acta Cryst. 12, 353 (1959); J.M. Cowley and A.F. Moodie, Acta Cryst. 12, 360 (1959)CrossRefGoogle Scholar
8. Fields, P.M. and Cowley, J.M., Acta Cryst. A 34, 102 (1978)Google Scholar
9. Ishizuka, K., Ultramicroscopy 5, 55 (1980)Google Scholar
10. Ruterana, P., Ganière, J.D. and Buffat, P.A., J. Microsc. Spectrosc. Electron. 13 (6), (1988), in pressGoogle Scholar