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High Resolution In Situ TEM Studies ofSilicide-Mediated Crystallization of Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

C. Hayzelden  and
J. L. Batstone
C. Hayzelden
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
J. L. Batstone
Affiliation:
IBM T.J.Watson Research Center, P.O. Box 704, Yorktown Heights, NY 10532
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Abstract

We report in situ high resolution transmission electronmicroscopy studies of NiSi2-Medi-ated crystallization ofAmorphous Si. Compared to conventional solid phase epitaxy of (111) Si, anenhancement of the growth rate by three orders of magnitude was observed andhigh quality twin-free needles of <111> Si were formed.Crystallization occurred via a ledge growth mechanism at the epitaxial TypeA NiSi2/crystalline Si (111) interface. A Model for NiSi2-Mediated crystallization of Amorphous Si involving thepassage of kinks along <110> ledges at theNiSi2/crystalline Si (111) interface is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 579
Copyright
Copyright © Materials Research Society 1994

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References

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