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High Resolution Electron Microscopy of Grain Boundaries in Silicon

Published online by Cambridge University Press:  15 February 2011

B. Cunningham  and
D. Ast
B. Cunningham
Affiliation:
Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, NY, 14853, USA.
D. Ast
Affiliation:
Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, NY, 14853, USA.
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Abstract

The lattice imaging technique has been used to study grain boundaries in annealed, chemically vapor deposited (CVD) silicon. The majority of the grain boundaries are Σ*=3, 9 or 27, i.e. they are all twin related, and have boundary planes which coincide with high density planes of the appropriate coincidence site lattice (CSL). Asymmetric Σ=27 boundaries are found to be dissociated on an atomic scale into faceted Σ=3 boundaries and Σ=9 boundaries. No dissociation of the Σ=27 boundaries is observed when the boundary planes are symmetric.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 21
Copyright
Copyright © Materials Research Society 1982

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References

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