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High Resolution Direct - Write Photochemical Etching of InP Using Methyl Iodide
Published online by Cambridge University Press: 25 February 2011
Abstract
Photochemical etching of InP using a cw frequency doubled Ar+ laser is evaluated with a view to the production of optoelectronic device features. The diffusion-limited resolution of the unmodified etching process is discussed and a new method of etching high resolution grooves which utilises a native oxide coating is described. Grooves produced in this way have widths comparable to that of the laser beam.
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- Research Article
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- Copyright © Materials Research Society 1989
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