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High Quality Uniform Thick Epitaxy of 4H-SiC for High Power Device Applications

Published online by Cambridge University Press:  01 February 2011

Jie Zhang ,
Janice Mazzola ,
Esteban Romano ,
Carl Hoff ,
Mike Mazzola ,
Janna Casady  and
Jeff Casady
Jie Zhang
Affiliation:
[email protected], SemiSouth Laboratories, Inc., Technology Support, 201 Research Blvd.,, Starkville, Mississippi, 39759, United States, (662) 324-7607, (662) 324-7997
Janice Mazzola
Affiliation:
[email protected], SemiSouth Laboratories, Inc., Starkville, Mississippi, 39759, United States
Esteban Romano
Affiliation:
[email protected], SemiSouth Laboratories, Inc., Starkville, Mississippi, 39759, United States
Carl Hoff
Affiliation:
[email protected], SemiSouth Laboratories, Inc., Starkville, Mississippi, 39759, United States
Mike Mazzola
Affiliation:
[email protected], SemiSouth Laboratories, Inc., Starkville, Mississippi, 39759, United States
Janna Casady
Affiliation:
[email protected], SemiSouth Laboratories, Inc., Starkville, Mississippi, 39759, United States
Jeff Casady
Affiliation:
[email protected], SemiSouth Laboratories, Inc., Starkville, Mississippi, 39759, United States
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Abstract

Growth of thick SiC epilayers has been investigated in a horizontal hot-wall CVD reactor capable of growing 3x2-in wafers or single wafer with a diameter up to 100mm. Good uniformity of lower than 3% for thickness and lower than 20% for doping has been obtained on 2-in or 3-in epi wafers with thickness of 60 - 120 μm. Low intentional nitrogen doping of 5.8x1014 cm-3 was achieved on a 3-in epi wafer with a thickness of 120 μm. A higher growth rate of 10 μm/h was achieved while good uniformity was maintained. Surface morphology of the thick epilayers was carefully examined and smooth surface was observed for epilayers thicker than 100 μm. The defect density of the thick epilayers was also discussed and the high purity of the thick epi was verified by low temperature PL measurement.

Keywords

chemical vapor deposition (CVD) (deposition)epitaxysemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B09-03
Copyright
Copyright © Materials Research Society 2006

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