Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T18:16:02.009Z Has data issue: false hasContentIssue false
  • English
  • Français

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

Published online by Cambridge University Press:  15 February 2011

L. K. Han ,
M. Bhat ,
J. Yan ,
D. Wristers  and
D. L. Kwong
L. K. Han
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78712, USA
M. Bhat
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78712, USA
J. Yan
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78712, USA
D. Wristers
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78712, USA
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78712, USA
Get access

Abstract

This paper reports on the formation of high quality ultrathin oxynitride gate dielectric by in-situ rapid thermal multiprocessing. Four such gate dielectrics are discussed here; (i) in-situ NO-annealed SiO2, (ii) N2O- or NO- or O2-grown bottom oxide/RTCVD SiO2/thermal oxide, (iii) N2O-grown bottom oxide/Si3N4/N2O-oxide (ONO) and (iv) N2O-grown bottom oxide/RTCVD SiO2/N2O-oxide. Results show that capacitors with NO-based oxynitride gate dielectrics, stacked oxynitride gate dielectrics with varying quality of bottom oxide (O2/N2O/NO), and the ONO structures show high endurance to interface degradation, low defect-density and high charge-to-breakdown compared to thermal oxide. The N2O-last reoxidation step used in the stacked dielectrics and ONO structures is seen to suppress charge trapping and interface state generation under Fowler-Nordheim injection. The stacked oxynitride gate dielectrics also show excellent MOSFET performance in terms of transconductance and mobility. While the current drivability and mobilities are found to be comparable to thermal oxide for N-channel MOSFET's, the hot-carrier immunity of N-channel MOSFET's with the N2O-oxide/CVD-SiO2/N2O-oxide gate dielectrics is found to be significantly enhanced over that of conventional thermal oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 221
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Joshi, A.B. and Kwong, D.L., IEEE Trans. Electron Devices, p. 2099, (1992).Google Scholar
2. Roy, P. K., Doklan, R. H., Martin, E. P., Shive, S. F., and Sinha, A. K., IEDM, p. 714, (1988).Google Scholar
3. Ahn, J., Ting, W., and Kwong, D. L., IEEE Electron Device Lett., p.186, (1992).Google Scholar
4. Tseng, H. H. and Tobin, P. J., IEDM, p. 321, (1993).Google Scholar
5. Han, L.K., Bhat, M., Wristers, D., Fulford, J. and Kwong, D. L., IEDM, p. 617, (1994).Google Scholar
6. Ting, W., Hwang, H., Lee, J. and Kwong, D. L., Appl. Phys. Lett., 57, p. 2808, (1990).Google Scholar
7. Hwang, H., Ting, W., Maiti, B., Kwong, D. L. and Lee, J., Appl. Phys. Lett., 57, p. 1010, (1990).Google Scholar
8. Ang, S. and Wilson, S., J. Electrochem. Soc., 143, p. 1254, (1987).Google Scholar
9. Ahn, J. and Kwong, D. L., IEEE Electron Device Letters, EDL–13, p. 494, (1992).Google Scholar
10. Nicollian, E. H. and Brews, J. R., MOS (Metal Oxide Semiconductor) physics and technology, New York: Wiley-Interscience, 1982.Google Scholar
11. Grunthaner, F. J., Grunthaner, P. J. and Maserjian, J., IEEE Trans. Nucl. Sci., NS–29, p. 1462, (1982).Google Scholar