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High Quality Poly-Si Film and Transistor Formed by Nickel-Induced- Lateral-Crystallization and Pulsed-Rapid-Thermal-Annealing

Published online by Cambridge University Press:  17 March 2011

T.C. Leung ,
C.F. Cheng  and
M.C. Poon
T.C. Leung
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
C.F. Cheng
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
M.C. Poon
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
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Abstract

Nickel Induced Lateral Crystallization (NILC) and Pulsed Rapid Thermal Annealing (PRTA) have been used to study new low temperature and high quality poly-silicon (poly-Si) films and thin film transistors (TFTs). The growth rate of poly-Si films has been found to greatly increase from 0.025μm/minute to 1.07μm/minute, and the drain current and performance of TFTs have increased by around 75%. The new poly-Si technology has good potential to apply in high performance, large area, fast throughput, low cost and even low temperature device applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D3.4.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Kuo, Yue and Kozlowski, P. M., Appl. Phys. Lett. 69 (8), 19 August 1996.Google Scholar
2. Jin, Zhonghe, Bhat, Gururaj a., Yeung, Milton, Kwok, Hoi S., and Wong, Man, Journal of Applied Physics, Vol. 84, no. 1, 1 July 1998.Google Scholar
3. Wang, Hongmei, Chan, Mansun, Member IEEE, Jagar, Singh, Poon, Vincent M. C., Qin, Ming, Wang, Yangyuan, and Ko, Ping K., IEEE Transactions on Electron Devices. Vol. 47, No. 8, August 2000.Google Scholar
4. Wong, Man, Jin, Zhonghe, Bhat, Gururaj A., Wong, Philip C., and Kwok, Hoi Sing, IEEE Transactions on Electron Devices, Vol. 47, No. 5, May 2000.Google Scholar
5. , Ohring, in The Materials Science of Thin Film, (United Kingdom Edition published by Academic Press, 1992), pp. 390–293.Google Scholar