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High Quality in.Ga1−xas Heterostructures Grown on GaAs With Movpe

Published online by Cambridge University Press:  10 February 2011

M.T. Bulsara  and
E.A. Fitzgerald
M.T. Bulsara
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139
E.A. Fitzgerald
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139
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Abstract

InxGa1−xAs structures with compositionally graded buffers were grown by metal-organic vapor phase epitaxy (MOVPE) on GaAs substrates and characterized with plan-view and cross-sectional transmission electron microscopy (PV-TEM and X-TEM), atomic force microscopy (AFM), and x-ray diffraction (XRD). The results show that surface roughness experiences a maximum at growth temperatures where phase separation occurs in InxGa1−xAs. The strain energy due misfit dislocations in the graded buffer indirectly influences phase separation. At growth temperatures above and below this temperature, the surface roughness is decreased significantly; however, only growth temperatures above this regime ensure nearly complete relaxed graded buffers with the most uniform composition caps. With the optimum growth temperature for grading InxGa1−xAs determined to be 700°C, it was possible to produce In0.33Ga0.67As diode structures on GaAs with threading dislocation densities < 8.5 × 106/cm2

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 101
Copyright
Copyright © Materials Research Society 1998

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