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High Quality In1-x(Gax)AsyP1-y/InP Compressive Strained Quantum Well Structures Grown by LP-MOCVD

Published online by Cambridge University Press:  10 February 2011

J. T. Zhu ,
A. R. Clawson  and
P. K. L. Yu
J. T. Zhu
Affiliation:
ECE Department, University of California, San Diego, La Jolla, CA 92037–0407
A. R. Clawson
Affiliation:
ECE Department, University of California, San Diego, La Jolla, CA 92037–0407
P. K. L. Yu
Affiliation:
ECE Department, University of California, San Diego, La Jolla, CA 92037–0407
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Abstract

We report the results of the growth of InAsyP1−y /InP and In0.86Ga0.14AS0.51P0.49/ In0.86Ga0.14As0.33P0.67 compressive strained multiple quantum wells (CSMQW) structures grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Our studies showed high quality 1.06 μm InAs0.21P0.79/InP CSMQW structure with 6 periods can be obtained when the growth temperature is around 650°C and the pressure in the reactor is about 20 Torr. When the well thickness and composition are tuned for wavelength around 1.30 μm, the quality of this structure degrades. By employing 1.1 μm wavelength, lattice-matched InGaAsP as the barrier layers and setting the growth temperature at 600 °C, high quality 1.30 μm wavelength In0.86Ga0.14AS0.51P0.49/ In0.86Ga0.14As0.33P0.67 CSMQW materials with 10 periods can also be obtained. The materials were characterized with high resolution x-ray rocking curves, room and low temperature photoluminescence (PL). The 15K full-width-at-half-maximums (FWHM) of the PL peaks for 1.06 μm InAs0.21P0.79/InP and 1.30 μm In0.86Ga0.14AS0.51P0.49/ In0.86Ga0.14As0.33P0.67 CSMQW structures are 5.6 meV and 4.97 meV, respectively, which are among the smallest FWHMs reported up to date for these kinds of MOCVD growth materials. Buried heterostructure lasers at 1.3 μm wavelength have been obtained with the CSMQWs as the active layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 45
Copyright
Copyright © Materials Research Society 1996

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