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High Quality Gate Insulator for Very-Low Temperature Poly-Si TFT Employing Nitrous Oxygen Plasma Pre-Treatment

Published online by Cambridge University Press:  17 March 2011

Moon Young Shin ,
Sang-Myeon Han ,
Min-Cheol Lee ,
Hee-Sun Shin ,
Min-Koo Han ,
Jang-Yeon Kwon  and
Takashi Noguchi
Moon Young Shin
Affiliation:
School of Electric Engineering and Computer Science (#50), Seoul National University San 56-1, Shinlim-Dong, Kwanak-Ku, Seoul, 151-742, Korea
Sang-Myeon Han
Affiliation:
School of Electric Engineering and Computer Science (#50), Seoul National University San 56-1, Shinlim-Dong, Kwanak-Ku, Seoul, 151-742, Korea
Min-Cheol Lee
Affiliation:
School of Electric Engineering and Computer Science (#50), Seoul National University San 56-1, Shinlim-Dong, Kwanak-Ku, Seoul, 151-742, Korea
Hee-Sun Shin
Affiliation:
School of Electric Engineering and Computer Science (#50), Seoul National University San 56-1, Shinlim-Dong, Kwanak-Ku, Seoul, 151-742, Korea
Min-Koo Han
Affiliation:
School of Electric Engineering and Computer Science (#50), Seoul National University San 56-1, Shinlim-Dong, Kwanak-Ku, Seoul, 151-742, Korea
Jang-Yeon Kwon
Affiliation:
Samsung Advanced Institute of Technology, MD Lab, Ki-Heung Eup, Yong-In, Kyoung-Ki Do, Korea, Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail : [email protected]
Takashi Noguchi
Affiliation:
Samsung Advanced Institute of Technology, MD Lab, Ki-Heung Eup, Yong-In, Kyoung-Ki Do, Korea, Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail : [email protected]
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Abstract

We have proposed nitrous oxide (N2O) plasma pre-treatment in order to reduce the oxide charge densities as well as to increase the breakdown field of silicon dioxide film for flexible display. Our experimental results show that the proposed treatment improved both the flat-band voltage from –3V to –1.8V and the breakdown voltage of gate oxide from 7MV/cm to 9.5MV/cm, respectively. The proposed treatment also improved poly-Si TFT characteristics such as low sub-threshold swing of 0.43V/dec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 814: Symposium I – Flexible Electronics 2004-Materials and Device Technology , 2004 , I7.9
Copyright
Copyright © Materials Research Society 2004

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References

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