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High Quality Epitaxial Growth on in-Situ Patterned Inp Substrates

Published online by Cambridge University Press:  28 February 2011

H. Temkin ,
L. R. Harriott ,
J. Weiner ,
R. A. Hamm  and
M. B. Panish
H. Temkin
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
L. R. Harriott
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. Weiner
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R. A. Hamm
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
M. B. Panish
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

We demonstrate a vacuum lithography process which uses a finely focused Ga ion beam to write the pattern which is then transferred to the InP pattern by low energy dry etching. Surface steps on the order of 1000-2000A in height, and lateral resolution limited only by size of the ion beam, can be efficiently prepared using moderate Ga ion fluences. The surfaces prepared by this process are damage free and suitable for epitaxial overgrowth. GaInAs/InP heterostructures grown on in-situ patterned substrates show excellent morphology and high luminescence efficiency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 39
Copyright
Copyright © Materials Research Society 1989

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