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High Quality a-Si Films and Superlattice Structure p-Layer a-Si Solar Cells

Published online by Cambridge University Press:  28 February 2011

Shoichi Nakano
Affiliation:
Research Center, SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Shinya Tsuda
Affiliation:
Research Center, SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Hisaki Tarui
Affiliation:
Research Center, SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Tsuyoshi Takahama
Affiliation:
Research Center, SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Hisao Haku
Affiliation:
Research Center, SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Kaneo Watanabe
Affiliation:
Research Center, SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Masato Nishikuni
Affiliation:
Research Center, SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Yoshihiro Hishikawa
Affiliation:
Research Center, SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Yukinori Kuwano
Affiliation:
Research Center, SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
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Abstract

As a new preparation method for high-quality a-Si films, we have developed the super chamber, a separated UHV reaction chamber system. A low impurity concentration and excellent film properties were obtained by the super chamber. A conversion efficiency of 11.7% was obtained for an a-Si solar cell using a high-quality i-layer deposited by the super chamber, and a p-layer fabricated by a photo-CVD method.

As a new material, amorphous superlattice structure films were fabricated by the photo-CVD method for the first time. Quantization effects and low damage to the interfaces were observed. Superlattice structure p-layer a-Si solar cells were fabricated for the first time, and a conversion efficiency of 10.5% was obtained.

Type
Articles
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

(1) Nakano, S., Kawada, H., Matsuoka, T., Kiyama, S., Sakai, S., Murata, K., Shibuya, H., kishi, Y., Nagaoka, I., Kuwano, Y.: Tech Digest of the Int. PVSEC-1, 583 (1984) Kobe, Japan Google Scholar
(2) Takahama, T., Isomura, M., Tarui, H., Nakashima, Y., Tsuda, S., Nakano, S., Kuwano, Y.: Proc. of the 46th Autumn Meeting of the Jpn. Soc. of Appl. Phys. lp-ZG-4, p. 747 (1985)Google Scholar