Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-27T02:25:12.687Z Has data issue: false hasContentIssue false

High Pressure Structural Phase Transition and Elastic Properties of MgX (X = S, Se, Te) Semiconducting Compounds

Published online by Cambridge University Press:  26 February 2011

Dinesh Varshney
Affiliation:
[email protected], Devi Ahilya University, School of Physics, Khandwa Road Campus, Indore, 452001, India
Netram Kaurav
Affiliation:
[email protected], Institute of Science and Laboratory Education, IPS Academy, Department of Physics, A. B. Road , Rajendra Nagar, Indore, 452012, India
Kamal Kumar Choudhary
Affiliation:
[email protected], S. V. I. T. S., Department of Engg. Physics, Sanwer Road, Baroli, Indore, 453331, India
R. Kinge
Affiliation:
[email protected], Devi Ahilya University, School of Physics, Khandwa Road Campus, Indore, 452001, India
R. K. Singh
Affiliation:
[email protected], Choudhary Devilal University, Institute of Professional and Scientific Studies and Research, Sirsa, 125055, India
Get access

Abstract

Pressure-induced structural aspects of NaCl-type (B1) to CsCl-type (B2) structure in MgX [X = S, Se, Te] semiconductors are presented. An effective interionic interaction potential (EIOP) with long range Coulomb, van der Waals (vdW) interaction and the short-range repulsive interaction upto second-neighbor ions within the Hafemeister and Flygare approach is developed. Particular attention is devoted to evaluate the vdW coefficients following the variational method, as both the cation and the anion are polarizable. Our result on vast volume discontinuity in pressure volume phase diagram identifies the structural phase transition from B1 to B2 structure. The estimated value of the phase transition pressure (Pt) is consistent with results previously published. The variations of elastic constants with pressure follow a systematic trend identical to that observed in others compounds of NaCl type structure family.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Narayana, C., Nesamony, V.J., and Rouff, A.L., Phys Rev B 56, 14338 (1997).Google Scholar
2. Munoz, A., Rodriguez-Hernandez, P., and Mujica, A., Phys Rev. B 54, 11861 (1996).Google Scholar
3. Chaudhuri, C. B., Pari, G., Mookerjee, A., and Bhattacharya, A. K., Phys Rev. B 60, 11846 (1999).Google Scholar
4. Ruoff, A. L., et al., Rev. Lett 81, 2723 (1998).Google Scholar
5. Kalpana, G., Palanivel, B., Thomas, Reena Mary, and Rajagopalan, M., Phys. B 222, 223 (1996).Google Scholar
6. Li, Ting, Luo, Huan, Greene, Raymond G., and Ruoff, Artur L., Phys. Rev. Lett 74, 5232 (1995).Google Scholar
7. Van Camp, P. E., Van Doren, V. E., and Martins, J. L., Phys Rev. B 55, 775 (1997).Google Scholar
8. Singh, R. K., Phys. Rep. 85, 259 (1982).Google Scholar
9. Varshney, Dinesh, Kaurav, N., Sharma, P., Shah, S. and Singh, R. K., Phase Trans. 77, 1075 (2004).Google Scholar
10. Chaudhuri, C. B., Pari, G., Mookerjee, A., and Bhattacharya, A. K., Phys Rev. B 60, 11846 (1999).Google Scholar
11. Slater, J. C., and Kirkwood, J.G., Phys Rev 37, 682 (1931).Google Scholar
12. Straub, Galen K., and Walter, A. Harrison Phys Rev B 39, 10325 (1989).Google Scholar
13. Miller, A. J., Saunders, G.A., and Yogurtcu, Y. K., J. Phys. C 14, 1569 (1981).Google Scholar