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High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress

Published online by Cambridge University Press:  01 February 2011

T. Paskova ,
T. Suski ,
M. Bockowski ,
P.P. Paskov ,
V. Darakchieva ,
B. Monemar ,
F. Tuomisto ,
K. Saarinen ,
N. Ashkenov  and
M. Schubert
...Show all authors
T. Paskova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83, Linköping, Sweden
T. Suski
Affiliation:
High Pressure Research Center, Unipress, Polish Academy of Sciences, 01–142 Warsaw, Poland
M. Bockowski
Affiliation:
High Pressure Research Center, Unipress, Polish Academy of Sciences, 01–142 Warsaw, Poland
P.P. Paskov
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83, Linköping, Sweden
V. Darakchieva
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83, Linköping, Sweden
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83, Linköping, Sweden
F. Tuomisto
Affiliation:
Helsinki University of Technology, P.O. Box 1100, 02015 HUT, Finland
K. Saarinen
Affiliation:
Helsinki University of Technology, P.O. Box 1100, 02015 HUT, Finland
N. Ashkenov
Affiliation:
Fakultät für Physik and Geowissenschaften, Universität Leipzig, 04103 Leipzig, Germany
M. Schubert
Affiliation:
Fakultät für Physik and Geowissenschaften, Universität Leipzig, 04103 Leipzig, Germany
C. Roder
Affiliation:
University of Bremen, Institute of Solid State Physics, 28359 Bremen, Germany
D. Hommel
Affiliation:
University of Bremen, Institute of Solid State Physics, 28359 Bremen, Germany
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Abstract

The effect of high temperature, high pressure annealing on morphology, optical and structural properties of free-standing GaN films grown by hydride vapor phase epitaxy is studied. The annealing is found to change the intensities of the photoluminescence peaks as a result of a redistribution of the impurities and native defects in the thick GaN films. A positron annihilation study shows a decrease of the Ga vacancy-related defects below the detection limit after the annealing. The defect redistribution is correlated with a flattening of the stress distribution across the thickness, as revealed by micro Raman study, and with a decrease of the curvature of the annealed free-standing films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E8.18
Copyright
Copyright © Materials Research Society 2005

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References

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