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High Precision Physical Model for Nickel MILC
Published online by Cambridge University Press: 01 February 2011
Abstract
Mechanism and growth rate of Metal-Induced-Lateral-Crystallization (MILC) with annealing temperature range from 550°C to 625°C were studied. Base on the MILC growth mechanism and effect of metal diffusion, a modeling on metal impurity distribution was developed. The modeling can be used to predict the distribution of metal impurity formed in the polysilicon layer after MILC annealing process. By applying the modeling, effects of annealing on the metal impurity distribution can be analyzed.
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- Copyright © Materials Research Society 2002