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High Power 325 Light Emitting Diode Arrays by Flip-Chip Packaging

Published online by Cambridge University Press:  11 February 2011

Ashay Chitnis ,
Maxim Shatalov ,
Vinod Adivarahan ,
Jian Ping Zhang ,
Shuai Wu ,
Jie Sun  and
M. Asif Khan
Ashay Chitnis
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
Maxim Shatalov
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
Vinod Adivarahan
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
Jian Ping Zhang
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
Shuai Wu
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
Jie Sun
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
M. Asif Khan
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Abstract

We report flip-chip 325 nm emission light emitting diodes over sapphire with dc powers as high as 0.84 mW at 180mA and pulse powers as high as 6.68 mW at 1A. These values to date are the highest reported powers for such short wavelength emitters. Our data shows the device output power under dc operation to be limited by the package heat dissipation. A study is presented to determine the role of thermal management in controlling the power output for the reported 325 nm ultraviolet light emitting diodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L7.7
Copyright
Copyright © Materials Research Society 2003

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References

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