Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-06T00:21:10.594Z Has data issue: false hasContentIssue false
  • English
  • Français

High Performance of Y-doped Sn-Zn-O Films Fabricated by Solution-process for Amorphous Thin Film Transistors

Published online by Cambridge University Press:  07 January 2014

Yunxuan Yu ,
Xian Gong ,
Dong Liu ,
Yan Wang  and
Jinfeng Kang
Yunxuan Yu
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Xian Gong
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Dong Liu
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China Peking University Shenzhen Graduate School, Shenzhen, 518055, China
Yan Wang*
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Jinfeng Kang*
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
*
*Email: [email protected]
Get access

Abstract

The effect of Y dopant incorporated into ZTO with different Y ratios in Y-ZTO system on the performances of ZTO-based TFTs is investigated by using sol-gel process. The proper Y doped ZTO present both high film crystallization temperature and superior electrical properties as an active channel layer of TFTs. The fabricated YZTO-based TFTs with 11% Y show the excellent devices performance such as the channel field effect mobility of 1.756 cm2/Vs, SS of 2.13 V/dec, threshold voltage of 0.8V and on/off ratio of 3.12×106.

Keywords

oxideamorphoussol-gel
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1630: Symposium O – Adaptive Soft Matter through Molecular Networks , 2014 , mrsf13-1630-o03-17
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Hyung Lim, Jun, Hyun Shim, Jong, APPLIED PHYSICS LETTERS 95, 012108 2009 Google Scholar
Fortunato*, E., Barquinha, P., Martins, R., Advanced Materials, Volume 24, Issue 22, pages 2945–2986, June 12, 2012 10.1002/adma.201103228CrossRefGoogle Scholar
Seo, Seok-Jun,JOURNAL OF PHYSICS D: APPLIED PHYSICS：42 (2009) 035106 (5pp)10.1088/0022-3727/42/3/035106CrossRefGoogle Scholar
Hong Jun, Lee，Journal of the Korean Physical Society April 2013, Volume 62, Issue 8, pp 1176–1182 Google Scholar
Ting∗, Chu-Chi;, Chang, Shiep-Ping, Li, Wei-Yang, Wang, Ching-Hua, Applied Surface Science, 284(2013) 397– 404, July 29, 2013 10.1016/j.apsusc.2013.07.111CrossRefGoogle Scholar
Young Koo, Chang, Song, Keunkyu, Jung, Yangho, Yang, Wooseok, Kim, Seung-Hyun, Jeong, Sunho, and Moon, Jooho, ACS Appl. Mater. Interfaces, 2012, 4(3), pp 1456–1461 Google Scholar
Joon Kim, Si, et al. ., Journal of Crystal Growth 326 (2011) 163–165.Google Scholar
Jeong, W. H. et al. ., Thin Solid Films. 519(2011)5740–5743.10.1016/j.tsf.2010.12.210CrossRefGoogle Scholar
Yong Chong, Ho, et al. ., Appl. Phys. Lett. 99, 161908 (2011).10.1063/1.3655197CrossRefGoogle Scholar
Hyun Yoon, Doo, et al. ., Journal of Crystal Growth 326 (2011) 171–174.10.1016/j.jcrysgro.2011.01.090CrossRefGoogle Scholar
Shin, Hyun Soo, Kim, Gun Hee, Jeong, Woong Hee, Ahnl, Byung Du, and Kim, Hyun Jae, Japanese Journal of Applied Physics 49 (2010) 03CB01 Google Scholar