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High Performance Of Gettering In Hydrogen Annealed Wafer

Published online by Cambridge University Press:  15 February 2011

Ryuji Takeda ,
Kenro Hayashi  and
Fumio Tokuoka
Ryuji Takeda
Affiliation:
Toshiba Ceramics Co., Ltd., R&D Center, 30, Soya, Hadano, Kanagawa, Japan.
Kenro Hayashi
Affiliation:
Toshiba Ceramics Co., Ltd., R&D Center, 30, Soya, Hadano, Kanagawa, Japan.
Fumio Tokuoka
Affiliation:
Toshiba Ceramics Co., Ltd., Chemical Products Division, 378, Oguni, Nishiokitama, Yamagata, Japan.
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Abstract

This paper reports on the study of the gettering of nickel contamination in hydrogen annealed CZ-silicon wafers by using method of wet chemical analysis. According to the wet chemical analysis, we believe that the hydrogen annealed wafer is of high quality in the region beneath the surface (DZ) and has a higher gettering ability for nickel compared with conventional CZ wafers. This observation is also in agreement with our MOS C-t measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 413
Copyright
Copyright © Materials Research Society 1996

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