Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-05T14:40:49.506Z Has data issue: false hasContentIssue false

High Performance Hydrogenated Amorphous Silicon n-i-p Photo-diodes on Glass and Plastic Substrates by Low-temperature Fabrication Process

Published online by Cambridge University Press:  01 February 2011

Kyung Ho Kim
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, 200 University Ave.W, Waterloo, N2L 3G1, Canada, 1-519-569-9900, 1-519-746-3077
Yuriy Vygranenko
Affiliation:
[email protected], Univerity of Waterloo, Electrical and Computer Engineering, 200 Univeristy Ave. W, Waterloo, N2L 3G1, Canada
Mark Bedzyk
Affiliation:
[email protected], Eastman Kodak Company, Rochester, NY, 14652-3487, United States
Jeff Hsin Chang
Affiliation:
[email protected], Univerity of Waterloo, Electrical and Computer Engineering, 200 Univeristy Ave. W, Waterloo, N2L 3G1, Canada
Tsu Chiang Chuang
Affiliation:
[email protected], Univerity of Waterloo, Electrical and Computer Engineering, 200 Univeristy Ave. W, Waterloo, N2L 3G1, Canada
Denis Striakhilev
Affiliation:
[email protected], Univerity of Waterloo, Electrical and Computer Engineering, 200 Univeristy Ave. W, Waterloo, N2L 3G1, Canada
Arokia Nathan
Affiliation:
[email protected], University College, London Centre for Nanotechnology, London, WC1H OAH, United Kingdom
Gregory Heiler
Affiliation:
[email protected], Eastman Kodak Company, Rochester, NY, 14652-3487, United States
Timothy Tredwell
Affiliation:
[email protected], Eastman Kodak Company, Rochester, NY, 14652-3487, United States
Get access

Abstract

We report on the fabrication and characterization of hydrogenated amorphous silicon (a-Si:H) films and n-i-p photodiodes on glass and PEN plastic substrates using low-temperature (150°C) plasma-enhanced chemical vapor deposition. Process conditions were optimized for the i-a-Si:H material which had a band gap of ~1.73 eV and low density of states (of the order 1015 cm-3). Diodes with 0.5 μm i-layer demonstrate quantum efficiency ~70%. The reverse dark current of the diodes on glass and PEN plastic substrate is ~10-11 and below 10-10 A/cm2, respectively. We discuss the difference in electrical characteristics of n-i-p diodes on glass and PEN in terms of bulk- and interface-state generation currents.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Technology and Applications of Amorphous Silicon, Ed. R. A. Street, (Springer, 2000).Google Scholar
2 Gleskova, H., Cheng, I. C., Kattamis, A., Wagner, S., Suo, Z., ECS Transactions 3, 249 (2006).Google Scholar
3 Ishikawa, Y., Schubert, M., Jpn. J. Appl. Phys. 45, 6812 (2006).Google Scholar
4 Gleskova, H., Wagner, S., Suo, Z., MRS Symp. Proc. 508, 73 (1998).Google Scholar
5 Nathan, A. et al., MRS Symp. Proc. 814, 61 (2004).Google Scholar
6 Vygranenko, Y., Chang, J.H., Nathan, A., IEEE J. Quant. Electronics 41. 697 (2005).Google Scholar
7 Nanomura, S. et al., J. Non-Crystalline Solids 266-269, 474 (2000).Google Scholar
8 Spanakis, E. et al., J. Appl. Phys., 89, 4294 (2001).Google Scholar
9 Schropp, R.E.I., Zeman, M. Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology (Kluwer 1998).Google Scholar
10 Street, R.A., Phil. Mag. B 63, 1343 (1991).Google Scholar
11 Theil, J.A., MRS Symp. Proc. 762 publ.#A21.4.1 (2003).Google Scholar
12 Street, R.A., Appl. Phys. Lett, 57, 1334 (1990).Google Scholar
13 Arch, J.K., Fonash, S.J., Appl. Phys. Lett. 60, 757 (1992); J. Appl. Phys. 72, 4483 (1992).Google Scholar
14 Ilie, A., Equer, B., Phys. Rev. B 57, 15349 (1998).Google Scholar
15 Vygranenko, Y., Kerr, R., Chang, J.H., Striakhilev, D., Nathan, A., Heiler, G., Tredwell, T., MRS Spring meeting 2007, A12.2.Google Scholar