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High Performance 0.5 and 0.25 μm Gate GaAs Mesfet Grown by MOCVD Using Tertiarybutylarsine

Published online by Cambridge University Press:  25 February 2011

V.S. Sundaram ,
B.-Y. Mao ,
S.J. Zurek ,
H.M. Levy ,
G.Y. Lee  and
L.M. Fraas
V.S. Sundaram
Affiliation:
High Technology Center, Boeing Aerospace and Electronics Seattle, Washington : 98124
B.-Y. Mao
Affiliation:
High Technology Center, Boeing Aerospace and Electronics Seattle, Washington : 98124
S.J. Zurek
Affiliation:
High Technology Center, Boeing Aerospace and Electronics Seattle, Washington : 98124
H.M. Levy
Affiliation:
High Technology Center, Boeing Aerospace and Electronics Seattle, Washington : 98124
G.Y. Lee
Affiliation:
High Technology Center, Boeing Aerospace and Electronics Seattle, Washington : 98124
L.M. Fraas
Affiliation:
High Technology Center, Boeing Aerospace and Electronics Seattle, Washington : 98124
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Abstract

Using tertiarybutylarsine and trimethylgallium a GaAs MESFET structure was grown and fabricated into half and quarter micron devices. The typical transconductance and unity current gain frequency (ft) for the half micron device were 360 mS/mm and 24 GHZ respectvely. The corresponding numbers for the quarter micron devices were 510 mS/mm and 55 GHZ respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 123
Copyright
Copyright © Materials Research Society 1991

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References

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