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High Mobility Nanocrystalline Indium Zinc Oxide Deposited at Room Temperature

Published online by Cambridge University Press:  17 March 2011

E. Fortunato ,
A. Pimentel ,
A. Gonçalves ,
A. Marques  and
R. Martins
E. Fortunato
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
A. Pimentel
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
A. Gonçalves
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
A. Marques
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
R. Martins
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
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Abstract

In this paper we present results of indium doped zinc oxide deposited at room temperature by rf magnetron sputtering, with electron mobility as high as 60 cm2/Vs. The films present a resistivity as low as 5 × 10-4 ωcm with an optical transmittance of 85%. The structure of these films look-like polymorphous (mixed of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns (no clear peak exists) with a high smooth surface, as detected from SEM micrographs, highly important to ensure long life time when used in display devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , E3.9
Copyright
Copyright © Materials Research Society 2004

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References

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