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High Gain, Silicon-on-insulator Photodetector with Multiple Gates and a Nanowire Based Narrow-wide-narrow Channel
Published online by Cambridge University Press: 08 March 2011
Abstract
We propose a phototransistor geometry that incorporates silicon nanowires (SiNW) in the device channel. A set of two gates controls the charge flow inside the NW. This improves the device photo-response more than 10x when compared with a single gate phototransistor, leading to a photo-responsivity of greater than 104(A/W), while the dark properties of both devices are similar.
Keywords
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 1305: Symposium AA – Nanomaterials Integration for Electronics, Energy and Sensing , 2011 , mrsf10-1305-aa08-02
- Copyright
- Copyright © Materials Research Society 2011
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