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High Gain, Silicon-on-insulator Photodetector with Multiple Gates and a Nanowire Based Narrow-wide-narrow Channel

Published online by Cambridge University Press:  08 March 2011

Anita Fadavi Roudsari ,
Simarjeet S. Saini ,
Nixon O  and
M. P. Anantram
Anita Fadavi Roudsari
Affiliation:
Electrical and Computer Engineering Department, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1
Simarjeet S. Saini
Affiliation:
Electrical and Computer Engineering Department, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1
Nixon O
Affiliation:
DALSA Corporation, Waterloo, Ontario, Canada N2V 2E9
M. P. Anantram
Affiliation:
Electrical Engineering Department, University of Washington, Seattle, WA 98195-352500 U.S.A
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Abstract

We propose a phototransistor geometry that incorporates silicon nanowires (SiNW) in the device channel. A set of two gates controls the charge flow inside the NW. This improves the device photo-response more than 10x when compared with a single gate phototransistor, leading to a photo-responsivity of greater than 104(A/W), while the dark properties of both devices are similar.

Keywords

nanostructureopticaldevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1305: Symposium AA – Nanomaterials Integration for Electronics, Energy and Sensing , 2011 , mrsf10-1305-aa08-02
Copyright
Copyright © Materials Research Society 2011

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References

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