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High Gain, Low Noise InP Heut for Millimeter-Wave Application

Published online by Cambridge University Press:  22 February 2011

C. Yuen ,
Y. C. Pao ,
N. Chiang  and
N. G. Bechtel
C. Yuen
Affiliation:
Litton Solid State Division 3251 Olcott Street, Santa Clara, CA. 95054 Tel: (408) 562-2922
Y. C. Pao
Affiliation:
Litton Solid State Division 3251 Olcott Street, Santa Clara, CA. 95054 Tel: (408) 562-2922
N. Chiang
Affiliation:
Litton Solid State Division 3251 Olcott Street, Santa Clara, CA. 95054 Tel: (408) 562-2922
N. G. Bechtel
Affiliation:
Litton Solid State Division 3251 Olcott Street, Santa Clara, CA. 95054 Tel: (408) 562-2922
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Abstract

Lattice matched InP HEMT has demonstrated superior gain and noise figure performance compared to the AlGaAs HEMT and PHEMT. The gain and noise figure advantages of the InP HEMT have been transferred to the excellent MMIC performance in the millimeter-wave region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 55
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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