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High Energy Heavy Ions Irradiation of Thermal SiO2 Films on Si

Published online by Cambridge University Press:  25 February 2011

Abdelilah Slaoui ,
Marie-Claude Busch ,
Eric Doorhyee ,
Marcel Toulemonde  and
Paul Siffert
Abdelilah Slaoui
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg Cedex 2, France
Marie-Claude Busch
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg Cedex 2, France
Eric Doorhyee
Affiliation:
CIRIL, BP 5133, F-14040 Caen Cedex, France
Marcel Toulemonde
Affiliation:
CIRIL, BP 5133, F-14040 Caen Cedex, France
Paul Siffert
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg Cedex 2, France
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Abstract

In this work, we present experimental observations of radiation damage in thermal SiO2 films grown on silicon, induced by energetic (> 0.2 GeV) O, Ni and Xe ions bombardement. The structural analysis of the SiO2 films, using infrared absorption spectroscopy, ellipsometry and etch rate measurements, points to atomic displacements, broken and strained Si-O bonds induced by irradiation. We have also estimated the damage production cross section and the track radii of the ions in the amorphous SiO2 films as a function of the electronic stopping power.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 141
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCE

1. Ma, T. P. and Dressendorfer, P. V., Ionizing Radiation Effects in MOS Devices and Circuits, (Wiley Interacience, New-York, 1989).Google Scholar
2. Chengru, Shi, Manqi, Tan and Tombrello, T. A., J. Nan Cryst. Solids, 104, 85 (1988).Google Scholar
3. Fritzsche, C. R. and Rothermund, W., J. Electrochem. Sec., 119, 1243 (1972).CrossRefGoogle Scholar
4. Devine, R. A. B., in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, edited by Helms, R. and Deal, B. E. (Plenum Publishing Corporation, 1988), p. 519.CrossRefGoogle Scholar
5. Balanzat, S., Jousset, J. C. and Toulemonde, M., Nucl. Inst. Methods, B32, 368 (1988).Google Scholar
6. Dooryhee, E., Langevin, Y., Borg, J., Duraud, J. P. and Balanzat, E., Nucl. Inst. Methods, B32, 264 (1988).CrossRefGoogle Scholar
7. Pliskin, W. A., J. Vac. Sci. Technol., 8, 512 (1971).Google Scholar
8. Busch, M. C., Slaoui, A., Siffert, P., Dooryhee, E. and Toulemonde, M., J. Appl. Phys., 71, 2596 (1992).Google Scholar
9. Chan, S. L., Gladden, L. F. and Elliott, S. R., in The Physics and Technology of amorphous SiO2 , edited by Devine, R.A.B. (Wiley, New-York, 1988), p. 83.CrossRefGoogle Scholar
10. Fitch, J. T., Kim, S.S. and Lucovsky, G., J. Vac. Sci. Technol., A8, 1871 (1990).CrossRefGoogle Scholar
11. Mozzi, R. L. and Warren, B. E., J. Appl. Cristallogr., 2, 164 (1969).CrossRefGoogle Scholar
12. Simon, I., in Modern Aspects of the Vitreous State, edited by Mackenzie, J. D. (Butterworths, London, 1960), p. 120.Google Scholar
13. Jollet, F., Duraud, J.P., Noguera, C., Dooryhee, E. and Langevin, Y., Nucl. Inst. Methods, B46, 125 (1990).Google Scholar
14. Douillard, L., Dooryhee, E., Duraud, J.P., Jollet, F. and Devine, R. A. B., Proceeding of the SHIM Conference, Bensheim/Darmstadt, May 19-22, 1992.Google Scholar
15. Fitch, J. T, Lucovsky, G., Kobeda, E. and Irene, E.A., J. Vac. Sci. Technol., B7, 153 (1989).CrossRefGoogle Scholar
16. Eernisse, E. P. and Norris, C. B., J. Appl. Phys. 45, 5196 (1974).Google Scholar
17. Fleischer, R. L., Prog. Mat. Sci., 10, 97 (1981).Google Scholar
18. Chadderton, L. T. and McTorrens, J., Fission Damage in Solids, (Mathuen, London, 1969), chap.12.Google Scholar
19. Liebau, F., in The Physics and Technology of amorphous SiO2 edited by Devine, R.A.B. (Wiley, New-York, 1988), p. l5.Google Scholar
20. Devine, R. A. B, Nucl. Inst. Methods, B46, 244 (1990).Google Scholar
21. Devine, R. A. B., J. Vac. Sci. Technol., A6, 3154 (1988).Google Scholar
22. Geissberger, A. E. and Galeener, F. L., Phys. Rev., B28, 3266 (1983).Google Scholar
23. Toulemonde, M., Balanzat, E., Bouffard, S., Grob, J.J., Hage-Ali, M. and Stoquert, J.P., Nucl. Inst. Methods, B46, 64 (1990).CrossRefGoogle Scholar