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High Electron Mobility W-doped In2O3 Thin Films

Published online by Cambridge University Press:  26 February 2011

Paul F. Newhouse ,
Cheol-Hee Park ,
Douglas A. Keszler ,
Janet Tate  and
Peter S. Nyholm
Paul F. Newhouse
Affiliation:
[email protected], Oregon State University, Chemistry, United States
Cheol-Hee Park
Affiliation:
[email protected], Oregon State University, Chemistry, United States
Douglas A. Keszler
Affiliation:
[email protected], Oregon State University, Chemistry, United States
Janet Tate
Affiliation:
[email protected], Oregon State University, Physics, United States
Peter S. Nyholm
Affiliation:
[email protected], Hewlett-Packard Company, United States
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Abstract

High electron mobility thin films of In2−xWxO3+d (0 ≤ × ≤ 0.075) were prepared by pulsed laser deposition. The highest mobility polycrystalline and textured films show mobility >110 cm2/Vs on both amorphous SiO2 and single crystal yttria-stabilized zirconia substrates. The carrier density is in the range 1−3 × 1020 cm−3 at room temperature. The W dopant concentration for films with optimized electrical properties was x ∼ 0.03.

Keywords

transparent conductorHall effectoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 905: Symposium DD – Materials for Transparent Electronics , 2005 , 0905-DD01-02
Copyright
Copyright © Materials Research Society 2006

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