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High electron mobility in free-standing GaN substrates

Published online by Cambridge University Press:  17 March 2011

A. Saxler ,
D. C. Look ,
S. Elhamri ,
J. Sizelove ,
D. Cull ,
W. C. Mitchel ,
M. Callahan ,
D. Bliss ,
L. Bouthillette  and
Sheng-Qi Wang
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A. Saxler
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio
D. C. Look
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio
S. Elhamri
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio
J. Sizelove
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio
D. Cull
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio
W. C. Mitchel
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio
M. Callahan
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Hanscom AFB, MA
D. Bliss
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Hanscom AFB, MA
L. Bouthillette
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Hanscom AFB, MA
Sheng-Qi Wang
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Hanscom AFB, MA
C. M. Sung
Affiliation:
Center for Advanced Materials, University of Massachusetts, Lowell, MA
S. S. Park
Affiliation:
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea
K. Y. Lee
Affiliation:
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea
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Abstract

High peak electron mobilities were observed in free-standing c-plane GaN substrates. Two layers, a low mobility degenerate layer and a high mobility bulk layer, were present in these samples. The carrier concentrations and mobilities for the layers were extracted using two methods: 1) magnetic field dependent Hall effect analysis and 2) a simple two carrier model with the assumption that one of the layers is degenerate. In addition, measurements were performed after etching away the degenerate layer. The mobility of the bulk layer is found to peak at nearly 8000 cm2/Vs at 60K using the magnetic field dependent Hall effect data. Record room temperature mobility for bulk GaN of 1190 cm2/V s was measured.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G7.2
Copyright
Copyright © Materials Research Society 2001

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References

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