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High Electric field effects on the Thermal Generation in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

A. Ilie  and
B. Equer
A. Ilie
Affiliation:
Lab. PICM (UPR258 CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex, France
B. Equer
Affiliation:
Lab. PICM (UPR258 CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex, France
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Abstract

We have studied the electric field dependence of the electron-hole thermal generation process in hydrogenated amorphous silicon. A model was developed which takes into account the Poole-Frenkel effect and the thermally assisted tunneling. In order to explain the experimental results it was necessary to consider a strong electron-lattice interaction describing the carrier tunneling mechanism. Deep defects relaxation is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 185
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Schiff, E.A., Street, R.A., Weisfield, R.L., Proc. ICAS-95, Kobe.Google Scholar
2. Chevrier, J.B. and Equer, B., J. Appl. Phys. 76, 7415 (1994).Google Scholar
3. Kramer, N. and van Berkel, C., Appl. Phys. Lett. 64, 28 (1994).Google Scholar
4. Street, R.A., Appl. Phys. Lett. 57, 1334 (1990).Google Scholar
5. Adler, D., Yoffa, E.J., Phys. Rev. Lett. 36, 1197 (1976).Google Scholar
6. Ilie, A. and Equer, B., to be published.Google Scholar
7. Makram-Ebeid, S. and Lannoo, M., Phys. Rev. B 25, 6406 (1982).Google Scholar
8. Kivelson, S. and Gelatt, C.D. Jr, Phys. Rev. B 19, 5160 (1979).Google Scholar
9. Vincent, G., Chantre, A. and Bois, D., J. Appl. Phys. 50, 5484 (1979).Google Scholar
10. Street, R.A., Phil. Mag. B 37, 35 (1978).Google Scholar
11. Branz, H.M. and Schiff, E.A., Phys. Rev. B 48, 8667 (1993).Google Scholar
12. Cohen, J.D., Leen, T.M. and Rasmussen, R.J., Phys. Rev. Lett. 69, 3358 (1993).Google Scholar