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High Efficiency Uv Emitter Using High Quality GaN/AlxGa1−xN Multi-Quantum Well Active Layer

Published online by Cambridge University Press:  17 March 2011

M. Iwaya ,
S. Terao ,
T. Ukai ,
R. Nakamura ,
S. Kamiyama ,
H. Amano  and
I. Akasaki
M. Iwaya
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
S. Terao
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
T. Ukai
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
R. Nakamura
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
S. Kamiyama
Affiliation:
High Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
H. Amano
Affiliation:
Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan High Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
I. Akasaki
Affiliation:
Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan High Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
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Abstract

We investigated temperature dependence of the photoluminescence (PL) efficiency of GaN/Al0.08Ga0.92N multi-quantum wells (MQWs) with variations of Si-doping condition and threading dislocation density. Si-doping in the GaN/Al0.08Ga0.92N MQWs, especially in the barrier layer improves the PL efficiency. In addition, reduction of threading dislocation density also improves the PL intensity. The PL intensity of the GaN/Al0.08Ga0.92N MQW is drastically increased at least by a factor of 40, by a combination of the Si-doping and reduction of threading dislocation density. We fabricated a light emitting diode (LED) emitting at 357 nm using such a GaN/Al0.08Ga0.92N MQWs. Electro-luminescence intensity from the region with threading dislocation density of less than 108 cm−2 was much larger than that from the region with threading dislocation density of 6×109 cm−2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G12.3
Copyright
Copyright © Materials Research Society 2001

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References

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