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High Efficiency Bulk Crystalline Silicon Light Emitting Diodes

Published online by Cambridge University Press:  11 February 2011

Jianhua Zhao ,
Aihua Wang ,
Thorsten Trupke  and
Martin A. Green
Jianhua Zhao
Affiliation:
Centre for Photovoltaic Engineering, University of New South Wales, Sydney 2052, Australia
Aihua Wang
Affiliation:
Centre for Photovoltaic Engineering, University of New South Wales, Sydney 2052, Australia
Thorsten Trupke
Affiliation:
Centre for Photovoltaic Engineering, University of New South Wales, Sydney 2052, Australia
Martin A. Green
Affiliation:
Centre for Photovoltaic Engineering, University of New South Wales, Sydney 2052, Australia
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Abstract

A high power conversion efficiency above 1% from a bulk crystalline silicon (c-Si) light-emitting diode (LED) has been demonstrated at near room temperature. These devices are based on normally weak one- and two-phonon assisted sub-bandgap light emission processes. Their improved performance results from device designs that take advantage of enhanced light absorption by a light trapping scheme which was developed for high efficiency silicon solar cells, and from reducing scope for parasitic non-radiative recombination within the diode. Each feature individually is shown to improve efficiency by a factor of ten, accounting for an improvement by factor of one hundred compared to baseline devices.

Also demonstrated is a greatly improved band-edge light emission and detection using bulk c-Si diodes. A bulk c-Si LED is combined with a similar diode used as a detector that collects the light emitted with a high quantum collection efficiency of 33%, to produce a silicon to silicon optically coupled system that demonstrates 0.18% coupling quantum efficiency. The crystalline silicon LED demonstrates similarly high performance at very low power levels, where it has even higher power efficiency than a high efficiency GaAlAs LED.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M4.7
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. King, O., and Hall, D. G., Phys. Rev. B 50, 10661 (1994).Google Scholar
2. Ong, T. C., Terrill, K. W., Tam, S., and Hu, C., IEEE Electron Device Lett. EDL–4, 460 (1983).Google Scholar
3. Michaelis, W. and Pilkuhm, M. H., Phys. Status Solidi 36, 311 (1969).Google Scholar
4. Kramer, J., Seitz, P., Steigmeier, E. F., Auderset, H., and Delley, B., Sensors and Actuators A 37–38, 527 (1993).Google Scholar
5. Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
6. Lyer, S. S. and Xie, Y. –H., Science 260, 40 (1993).Google Scholar
7. Gelloz, B. and Koshida, N., J. Appl. Phys. 88, 4319 (2000).Google Scholar
8. Bell, P., Nature 409, 974–976 (2001).Google Scholar
9. Hirschman, K. D., Tsybeskov, L., Duttagupta, S. P., and Fauchet, P. M., Nature 384, 338 (1996).Google Scholar
10. Huertas, P., Mier, G., Dotor, M. L., Anguita, J. V., Golmayo, D. and Briones, F., Sensors and Actuators A 37–38, 512 (1993).Google Scholar
11. Lazarouk, S., Jaguiro, P., and Borisenko, V., Phys. Stat. Sol. (a) 165, 87 (1998).Google Scholar
12. Green, M. A., Zhao, J., Wang, A., Reece, P. J., and Gal, M., Nature 412, 805, (2001).Google Scholar
13. Wang, A., Zhao, J., Green, M. A., Appl. Phys. Lett. 57, 602 (1990).Google Scholar
14. Zhao, J., Wang, A., Green, M.A., Progress in Photovoltaics 7, 471 (1999).Google Scholar
15. Campbell, P., Green, M. A., J. Appl. Phys. 62, 243 (1987).Google Scholar
16. Kirchhoff, G. R., Ann. D. Phys. 109, 275 (1860) (in German).Google Scholar
17. Zhao, J., Wang, A., Altermatt, P. P., Wenham, S. R., and Green, M. A., Solar Energy Mat. & Solar Cells 41/42, 87 (1996).Google Scholar
18. Zhao, J., Green, M. A. and Wang, A., J. of Appl. Phys. 92, 2977–2979 (2002).Google Scholar
19. Thomas, G. A., Ackerman, D. A., Prucnal, P. R., and Cooper, S. L., Phys. Today 53, 30 (2000).Google Scholar
20. Sze, S.M. Advanced Research Workshop on Future Trends in Microelectronics, Ile de Bendor, France, (2001).Google Scholar