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High Density Dry Etching of (Ba,Sr)TiO3 and LaNiO3

Published online by Cambridge University Press:  10 February 2011

K. P. Lee ,
K. B. Jung ,
A Srivastava ,
D. Kumar ,
R. K. Singh  and
S. J. Pearton
K. P. Lee
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
K. B. Jung
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
A Srivastava
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
D. Kumar
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
R. K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
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Abstract

High density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤ 100 Å-min−1) under all conditions, the Cl2/Ar produced a smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of ∼900 Å min−1 for both materials were achieved with selectivities of ∼16 for BST and ∼7 for LNO over Si. A single layer of thick (∼7 μm) photoresist is an effective mask under these conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 91
Copyright
Copyright © Materials Research Society 2000

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References

1 Chaneliere, C., Autran, J. L., Devine, R. A. B. and Balland, B., Mat.Sci.Eng. Rep. R 22 269 (1998), and references therein.Google Scholar
2 Kaga, T., Ohkura, M., Murai, F., Yokohama, N. and Takeda, E., J.Vac.Sci. Technol. B 13 2329 (1995).Google Scholar
3 Itoh, K., Nakagome, Y., Kimura, S. and Watanabe, T., IEEE J. Solid State Circuits SSC–32 624 (1997).Google Scholar
4 Kim, S. O. and Kim, H. J., J. Vacc. Sci. Technol, B 12 3006 (1994).Google Scholar
5 Shimada, H. and Ohmi, T., IEEE Trans. Electron. Dev. ED–43 431 (1996).Google Scholar
6 Muraka, S. P., Mat. Sci. Eng. Rep. R 19 87 (1997).Google Scholar
7 Scott, J. F., Ann. Rev. Mater. Sci. 28 79 (1998), and references thecein.Google Scholar
8 Tasch, A. F. and Parker, L. H., Proc. IEEE 77 374 (1989)Google Scholar
9 Hubert, C., Levy, J., Carter, A. C., Chang, W., Kiechoefer, S. W., Horowitz, J. S. and Chrisey, D. B., Appl. Phys. Lett. 71 3353 (1997).Google Scholar
10 Horwitz, J. S., Chrisey, D. B., Pond, J. M., Auyeng, R. C. Y., Cotell, C. M., Grabowski, K. S., Dorsey, P. C. and Kluskens, M. S., Integr. Ferroelectr. 8 53 (1995)Google Scholar
11 Chu, C. M. and Lin, P., Apply. Phys. 72 1241 (1998).Google Scholar
12 Cho, H. J. and Kim, H. J., Appl. Phys. Lett. 72 786 (1998).Google Scholar
13 Cho, H. J., Oh, S., Kang, C. S., Hwang, C. S., Lee, B. T., Lee, K. H., Horii, H., Lee, S. I. and Lee, M. Y., Appl. Phys. Lett. 71 3221 (1998).Google Scholar
14 Hwang, C. S., Lee, B. T., Cho, H. J., Oh, S., Kang, C. S., Hideki, H., Lee, S. I. and Lee, M. Y., Appl. Phys. Lett. 71 371 (1998).Google Scholar
15 Jia, A. X., Wu, X. D., Foltyn, S. R. and Tiwari, P., Appl. Phys. Lett. 66 2197 (1995).Google Scholar
16 Zafar, S., Jones, R. E., Chu, P., White, B., Jiang, B., Taycor, D., Zurcher, P. and Gillespie, S., Appl. Phys. Lett. 71 2820 (1998).Google Scholar
17 Hou, S. J., Kwo, J., Watts, R. K., Cheng, J-Y. and Fork, D. K., Appl. Phys. Lett. 67 1387 (1995).Google Scholar
18 Cho, C. R., Payne, D. A. and Cho, S. L., Appl. Phys. Lett. 71 3013 (1997).Google Scholar
19 Chen, M. S., Wu, T. B. and Wu, J-M., Appl. Phys. Lett. 68 1430 (1996).Google Scholar
20 Li, A., Be, C., Lu, P., Wu, D., Xing, S. and Ming, N., Appl. Phys. Lett. 70 1616 (1997); Appl. Phys. Lett. 69 161 (1996).Google Scholar
21 Yang, C.-C., Chen, M.-S., Hang, T.-J., Wu, C.-M. and Wu, T.-B., Appl. Phys. Lett. 66 2643 (1995).Google Scholar
22 Srivastava, A., Kumar, D. and Singh, R.K., Electrochem. Solid-State Lett. (in press).Google Scholar