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High Density Dry Etching of (Ba,Sr)TiO3 and LaNiO3

Published online by Cambridge University Press:  10 February 2011

K. P. Lee ,
K. B. Jung ,
A Srivastava ,
D. Kumar ,
R. K. Singh  and
S. J. Pearton
K. P. Lee
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
K. B. Jung
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
A Srivastava
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
D. Kumar
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
R. K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
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Abstract

High density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤ 100 Å-min−1) under all conditions, the Cl2/Ar produced a smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of ∼900 Å min−1 for both materials were achieved with selectivities of ∼16 for BST and ∼7 for LNO over Si. A single layer of thick (∼7 μm) photoresist is an effective mask under these conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 91
Copyright
Copyright © Materials Research Society 2000

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