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High Conductive a-Si:H/a-SiC:H:F Super Lattice Prepared by a Chemically Controlled Method

Published online by Cambridge University Press:  26 February 2011

H. Koinuma ,
M. Kawasaki  and
K. Fueki
H. Koinuma
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, Japan 113
M. Kawasaki
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, Japan 113
K. Fueki
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, Japan 113
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Abstract

Amorphous super lattices composed of a-Si:H and a-SiC:H:F layers were continuously prepared from a gas miture of CF4 and either SiH4 or Si2 H6 by the pulsed plasma and photo (PP&P) CVD method. The method utilizes the difference in photochemical reactivity of the source gases for the formation of layered structure. The layered films prepared by using Si2H6 as silicon source under the condition that they had optical gaps up to 2.0 eV were found to show photoconductivities higher not only than those of a-SiC:H:F films prepared from the same gas mixture by the continuous plasma and photo hybrid CVD but also than those of a-Si:H films by the photo CVD. From the comparison of optical and electrical properties of super lattices prepared, the photoconductivity of the films is suggested to be primarily dependent on the quality of barrier layer rather than on the quality of well layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 387
Copyright
Copyright © Materials Research Society 1987

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References

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