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High Barrier Height MIS Diodes on n-InP Using Pd, Ni and Au on a Chemical Oxide

Published online by Cambridge University Press:  26 February 2011

Y. S. Lee  and
W. A. Anderson
Y. S. Lee
Affiliation:
State University of New York at Buffalo, Center for Electronic and Electrooptic Materials, 217C Bonner Hall, Amherst, NY 14260
W. A. Anderson
Affiliation:
State University of New York at Buffalo, Center for Electronic and Electrooptic Materials, 217C Bonner Hall, Amherst, NY 14260
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Abstract

MIS diodes were fabricated using Pd, Ni and Au- contacts on n-InP covered by a 40 Å chemically-grown oxide. The oxide had a refractive index of 1.4–1.6 with a composition of mainly In2O3 + some InPO3 near the surface and mixed oxide + InP near the interface. Pd-devices gave the highest barrigr height of 0.80 eV and lowest reverse saturation current density of 3×10−8A/cm2. I-V-T and C-V-T data gave temperature dependence of barrier height and revealed an interface state recombination current mechanism. Richardson plots gave good straight lines when empirically corrected using øB/n instead of just øB.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 631
Copyright
Copyright © Materials Research Society 1989

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References

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