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High Active GAS (O2 or N2) Pressure Crystal Growth and Phase Diagram of YBaCuO Phases and GaN

Published online by Cambridge University Press:  15 February 2011

J. Karpinski ,
E. Kaldis ,
K. Conder ,
S. Rusiecki  and
E. Jilek
J. Karpinski
Affiliation:
Laboratorium für Festkörperphysik ETH 8093–Zürich, Switzerland.
E. Kaldis
Affiliation:
Laboratorium für Festkörperphysik ETH 8093–Zürich, Switzerland.
K. Conder
Affiliation:
Laboratorium für Festkörperphysik ETH 8093–Zürich, Switzerland.
S. Rusiecki
Affiliation:
Laboratorium für Festkörperphysik ETH 8093–Zürich, Switzerland.
E. Jilek
Affiliation:
Laboratorium für Festkörperphysik ETH 8093–Zürich, Switzerland.
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Abstract

A review of the phase diagram studies of the YBaCuO and GaN systems under high active gas (O2 or N2) pressure is given. The P,T equilibrium conditions for three superconducting phases existing in YBaCuO system vary as a function of Cu content. Application of high O2 pressure allows crystal growth of the 124 and 247 compounds and high N2 pressure alow crystal growth of GaN. We discuss also indications, that other YBaCuO compounds may exist.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 251: Symposium S – Pressure Effects on Materials Processing and Design , 1991 , 291
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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