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A HgCdTe/CdTe/GaAs/Si Epitaxial Structure

Published online by Cambridge University Press:  25 February 2011

K. Zanio ,
R. Bean ,
K. Hay ,
R. Fischer  and
H. Morkoc
K. Zanio
Affiliation:
Ford Aerospace & Communications Corporation, Ford Road, Newport Beach, CA 92658-9983
R. Bean
Affiliation:
Ford Aerospace & Communications Corporation, Ford Road, Newport Beach, CA 92658-9983
K. Hay
Affiliation:
Ford Aerospace & Communications Corporation, Ford Road, Newport Beach, CA 92658-9983
R. Fischer
Affiliation:
University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1101 W. Springfield Ave., Urbana, IL 61801
H. Morkoc
Affiliation:
University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1101 W. Springfield Ave., Urbana, IL 61801
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Abstract

Four layer HgCdTe/CdTe/GaAs/Si structures have been prepared by the sequential growth of (100) GaAs on (100) Si by MBE, (100) CdTe on GaAs/Si by congruent evaporation in UHV and (100) HgCdTe on CdTe/GaAs/Si by vapor transport. Infrared transmission, X-ray rocking curves, differential interference contrast microscopy and selected area electron channelling patterns characterize the structures.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 141
Copyright
Copyright © Materials Research Society 1986

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References

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