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HgCdTe Versus Hgznte: Electronic Properties and Vacancy Formation Energies

Published online by Cambridge University Press:  25 February 2011

M. A. Berding ,
A.-B. Chen  and
A. Sher
M. A. Berding
Affiliation:
SRI International, Menlo Park, CA 94025
A.-B. Chen
Affiliation:
Auburn University, Auburn, AL 36849
A. Sher
Affiliation:
SRI International, Menlo Park, CA 94025
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Abstract

The alloy variation of the band gap and the electron and hole effective masses have been calculated for HgCdTe and HgZnTe. Band-gap bowing is larger in HgZnTe than in HgCdTe because of the larger bond length mismatch of HgTe and ZnTe; electron and hole effective masses are found to be comparable for the two alloys for a given band gap. We have calculated the electron mobility in both alloys with contributions from phonon, impurity, and alloy scattering. Contributions to the E1 line width due to alloy and impurity scattering in Hg0.7Cd0.3Te have been calculated. Results of calculations of the vacancy formation energies in HgTe, ZnTe, and CdTe are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 127
Copyright
Copyright © Materials Research Society 1987

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References

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