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Heterostructures with Strained InGaAs Quantum Wells for RCE Photodiode Applications in the 1.8–2 μm Spectral Range

Published online by Cambridge University Press:  26 February 2011

Jadwiga Zynek ,
Agata Jasik ,
Jaroslaw Gaca ,
Marek Wojcik ,
Wlodzimierz Strupinski ,
Jaroslaw Rutkowski ,
Artur Wnuk  and
Krzysztof Klima
Jadwiga Zynek
Affiliation:
Institute of Electronic Materials Technology, 133 Wolczynska str., 01–919 Warsaw, Poland
Agata Jasik
Affiliation:
Institute of Electronic Materials Technology, 133 Wolczynska str., 01–919 Warsaw, Poland
Jaroslaw Gaca
Affiliation:
Institute of Electronic Materials Technology, 133 Wolczynska str., 01–919 Warsaw, Poland
Marek Wojcik
Affiliation:
Institute of Electronic Materials Technology, 133 Wolczynska str., 01–919 Warsaw, Poland
Wlodzimierz Strupinski
Affiliation:
Institute of Electronic Materials Technology, 133 Wolczynska str., 01–919 Warsaw, Poland
Jaroslaw Rutkowski
Affiliation:
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00–908 Warsaw, Poland
Artur Wnuk
Affiliation:
Institute of Electronic Materials Technology, 133 Wolczynska str., 01–919 Warsaw, Poland
Krzysztof Klima
Affiliation:
Institute of Electronic Materials Technology, 133 Wolczynska str., 01–919 Warsaw, Poland
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Abstract

The results of the work on the technology and characterization methods of resonant cavity enhanced (RCE) photodiode heterostructures with strained InxGa1–xAs quantum wells (0.65≤x≤0.82), designed for the 1.8 - 2 μm spectral range, are presented. The heterostructures grown on InP by metalorganic chemical vapor deposition have been investigated by high-resolution X-ray diffraction with synchrotron source, transmission electron microscopy, photoluminescence and reflectivity spectra measurements. Non-resonant photodiodes fabricated from these epitaxial structures exhibit dark current densities below 10-6 A/cm2 and quantum efficiencies above 1 % (even without bias). These quantum efficiency values are a good basis for the resonant cavity enhancement. The optical field enhancement at quantum wells has been examined in resonant heterostructures before processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B2.9
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

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