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Heteroepitaxy of Gallium Arsenide on Germanium Coated Silicon Substrates

Published online by Cambridge University Press:  25 February 2011

Shirley S. Chu ,
T. L. Chu  and
H. Firouzi
Shirley S. Chu
Affiliation:
School of Engineering and Applied Science, Southern Methodist University, Dal las, Texas 75275 U. S. A.
T. L. Chu
Affiliation:
School of Engineering and Applied Science, Southern Methodist University, Dal las, Texas 75275 U. S. A.
H. Firouzi
Affiliation:
School of Engineering and Applied Science, Southern Methodist University, Dal las, Texas 75275 U. S. A.
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Abstract

Single crystalline epitaxial GaAs layers have been grown on silicon substrates with a thin germanium interlayer. All semiconductor layers were deposited by the chemical vapor deposition technique. The surface condition of the silicon substrate is an important factor affecting the quality of GaAs/Ge films on silicon. P+/n homojunction solar cells of 0.25 cm2 area with an AM1 efficiency near 12% have been prepared.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 135
Copyright
Copyright © Materials Research Society 1986

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References

[1] Chu, Shirley S., Chu, T. L., Jilang, C. L., Loh, C. W., Stokes, E. D., and Yu, J. M., Proceedings of the Fifteenth IEEE Photovoltaic Specialists Conference, (IEEE, New York, 1981), p. 1310.Google Scholar
[2] Chu, Shirley S., Chu, T. L., Zhang, F. S., Chen, W. J., and Wang, Q. H., Proceedings of the Sixteenth IEEE Photovoltaic Specialists Conference, (IEEE, New York, 1982), p. 1149.Google Scholar
[3] Tsaur, B-Y., Fan, J. C. C., Turner, G. W., Davis, F. M. and Gale, R. P., Proceedings of the Sixteenth IEEE Photovoltaic Special ists Conference. (IEEE, New York, 1982), p. 1143.Google Scholar
[4] Ohmachi, Y., Nishioka, T., and Shinoda, Y., J. Appl. Phys. 54, 5466 (1983).CrossRefGoogle Scholar
[5] Bajor, G., Cadien, K. C., Ray, M. A., and Green, J. E., Appl. Phys. Lett. 40, 696 (1982).CrossRefGoogle Scholar
[6] Sheldon, P., Jones, K. M., Hayes, R. E., Tsaur, B-Y., and Fan, J. J. C., Appl. Phys. Lett. 45, 274 (1984).CrossRefGoogle Scholar