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Heteroepitaxy and Characterization of Low-Dislocation-Density GaN on Periodically Grooved Substrates

Published online by Cambridge University Press:  17 March 2011

T. Detchprohm ,
M. Yano ,
R. Nakamura ,
S. Sano ,
S. Mochiduki ,
T. Nakamura ,
H. Amano  and
I. Akasaki
T. Detchprohm
Affiliation:
High-Tech Research Center, Meijo University
M. Yano
Affiliation:
Department of Electrical & Electronic Engineering, Meijo University
R. Nakamura
Affiliation:
Department of Electrical & Electronic Engineering, Meijo University
S. Sano
Affiliation:
Department of Electrical & Electronic Engineering, Meijo University
S. Mochiduki
Affiliation:
Department of Electrical & Electronic Engineering, Meijo University
T. Nakamura
Affiliation:
Department of Electrical & Electronic Engineering, Meijo University
H. Amano
Affiliation:
High-Tech Research Center, Meijo University Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
I. Akasaki
Affiliation:
High-Tech Research Center, Meijo University Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Abstract

We have developed a new method to prepare low-dislocation-density GaN by using periodically grooved substrates in a conventional MOVPE growth technique. This new approach was demonstrated for GaN grown on periodically grooved α-Al2O3(0001), 6H-SiC(0001)Si and Si(111) substrates. Dislocation densities were 2×107 cm−2 in low-dislocation-density area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G5.7
Copyright
Copyright © Materials Research Society 2001

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References

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