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Heteroepitaxial Si1-x-yGex Cy Layer Growth on (100)Si by Atmospheric Pressure Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

Z. Atzmon ,
A. E. Bair ,
T. L. Alford ,
D. Chandrasekhar ,
David J. Smith  and
J.W. Mayer
Z. Atzmon
Affiliation:
Department of Chemical, Bio, and Materials Engineering, Arizona State UniversityTempe, Arizona 85287
A. E. Bair
Affiliation:
Department of Chemical, Bio, and Materials Engineering, Arizona State UniversityTempe, Arizona 85287
T. L. Alford
Affiliation:
Department of Chemical, Bio, and Materials Engineering, Arizona State UniversityTempe, Arizona 85287
D. Chandrasekhar
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287
David J. Smith
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287
J.W. Mayer
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287
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Abstract

Thin heteroepitaxial films of Si1-x-yGexCy have been grown on (100)Si substrates using atmospheric pressure chemical vapor deposition at 550 and 700°C. The crystallinity, composition and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry (ion channeling), secondary-ion-mass-spectrometry and cross-sectional transmission electron microscopy. SiGeC films with up to 2% C were grown at 700°C with good crystallinity and very few interracial defects, while misfit dislocations at the SiGe/Si interface were observed for SiGe films grown under the same conditions. This difference indicates that the presence of carbon in the SiGe matrix increases the critical thickness of the grown layers. SiGeC thin films (>110 nm) with up to 3.5% C were grown at 550°C with good crystallinity. The crystallinity of the films grown at lower temperature (550°C) was less sensitive to the flow rate of the C source (C2H4), which enabled growth of single crystal SiGeC films with higher C content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 117
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 People, R., Bean, J. C., Lang, D. V., Sergent, A. M., Stromer, H. L., Wecht, K. W., T.Lynch, R., and Baldwin, K., Appl. Phys. Lett. 45, 1231 (1984).Google Scholar
2 Soref, R. A., J. Appl. Phys. 70, 2470 (1991).Google Scholar
3 Furukawa, S., Etoh, H., Ishizaka, A., and Shimada, T., United State Patent # 4885614, (1989).Google Scholar
4 Eberl, K., Iyer, S. S., and LeGoues, F. K., Appl. Phys. Lett. 64, 739 (1994).Google Scholar
5 Iyer, S. S., Eberl, K., Goorsky, M. S., LeGoues, F. K., Tsang, J. C., Appl. Phys. Lett. 60, 356 (1992)Google Scholar
6 Atzmon, Z., Bair, A. E., Jaquez, E. J., Mayer, J. W., Chandrasekhar, D., Smith, D. J., Hervig, R. L., and Robinson, McD., Appl. Phys. Lett. 65, 2559 (1994)Google Scholar
7 Bair, A. E., Atzmon, Z., Russel, S. W., Alford, T. L., Mayer, J. W., and Barbour, J. C., Nucl Inst. and Meth. (1995), in press.Google Scholar
8 Bean, J. C., Sheng, T. T., Feldman, L. C., Fiory, A. T., and Lynch, R. T., Appl. Phys. Lett. 44, 102 (1984).Google Scholar