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Heteroepitaxial growth of ZnO films on Gd3Ga5O12 garnet substrates

Published online by Cambridge University Press:  21 March 2012

Yosuke Ono ,
Hiroaki Matsui  and
Hitoshi Tabata
Yosuke Ono
Affiliation:
Department of Electrical Engineering and Information Systems, the University of Tokyo, Tokyo 113-0032, Japan
Hiroaki Matsui
Affiliation:
Department of Electrical Engineering and Information Systems, the University of Tokyo, Tokyo 113-0032, Japan Department of Bioengineering, the University of Tokyo, Tokyo 113-0032
Hitoshi Tabata
Affiliation:
Department of Electrical Engineering and Information Systems, the University of Tokyo, Tokyo 113-0032, Japan Department of Bioengineering, the University of Tokyo, Tokyo 113-0032
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Abstract

This study focused on structural and optical properties of ZnO films grown epitaxially on Gd3Ga5O12 substrates. ZnO films (a = 3.2439 Å and c = 5.2036 Å) were deposited on the (001) and (111) planes of Gd3Ga5O12 (GGG: a = 12.383 Å) garnet substrates by a pulsed laser deposition method. From out-of-plane and in-plane X-ray diffraction measurements, the obtained ZnO films showed a single phase with the (0001) orientation on the GGG (001) and (111) substrates. The epitaxial relations between the ZnO film and GGG (001) substrate were [10-10] ZnO ‖ [100] GGG and [10-10] ZnO ‖ [010] GGG, while the epitaxial relations between the ZnO film and GGG (111) substrate were [10-10] ZnO ‖ [11-2] GGG ±21°. Furthermore, transmittance electron microscopy revealed sharp interfaces between ZnO films and GGG substrates. From photoluminescent spectra, the ZnO films showed donor bound emissions superimposed with free excitons at a low temperature of 10 K.

Keywords

crystal growthlaser ablationepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1394: Symposium M – Oxide Semiconductors–Defects, Growth and Device Fabrication , 2012 , mrsf11-1394-m10-02
Copyright
Copyright © Materials Research Society 2012

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References

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