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Heteroepitaxial Growth of Ba0.5Sr0.5TiO3/SrRuO3 on YSZ/Si by Off-Axis Sputtering

Published online by Cambridge University Press:  15 February 2011

S.Y. Hou ,
J. Kwo ,
R.K. Watts ,
J.-Y. Cheng ,
R.J. Cava ,
W.F. Peck Jr  and
D.K. Fork
S.Y. Hou
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. Kwo
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R.K. Watts
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J.-Y. Cheng
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R.J. Cava
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W.F. Peck Jr
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D.K. Fork
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

We demonstrate an epitaxial heterostructure of Ba0.5Sr0.5 TiO3/SrRuO3/YSZ on Si for potential charge storage applications. The dielectric Ba0.5Sr0.5TiO3 (BST) and conductive oxide SrRuO3 are both grown (110) oriented on YSZ (100) buffered Si by 90° off-axis sputtering. These films showed a high degree of crystallinity with minimal interdiffusion at the interfaces as examined by X-ray diffraction, Rutherford backscattering spectroscopy, and cross-section transmission electron microscopy. The in-plane epitaxial alignment of the films is BST/SRO 〈111〉 // YSZ 〈110〉 with a four-fold degeneracy. The dielectric constant and loss tangent of the epi-BST films are 360 and 0.01 at 10 kHz. The leakage current density is < 4×10∼−7 A/cm2 at 1 V. The room temperature dielectric constant (ε) of the BST films shows a roll-off in the 1–10 MHz range. This is attributed to the existence of a series resistance in the measurement circuit, which likely arises from the SrRuO3 electrode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 99
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

[1] Jona, F. and Shirane, G., Ferroelectric Crystals, (Pergamon Press, New York, 1962).Google Scholar
[2] Gränicher, H. and Jakits, O., Nuovo Cimento, Suppl. 11, 480 (1954).Google Scholar
[3] Roy, D. and Krupanidhi, S.B., Appl. Phys. Lett. 62, 1056 (1993).Google Scholar
[4] Ichinose, N. and Ogiwara, T., Jpn. J. Appl. Phys. 32, 4115 (1993).Google Scholar
[5] Takemura, K., Sakuma, T., and Miyasaka, Y., Appl. Phys. Lett. 64, 2967 (1994).Google Scholar
[6] Yoon, S.-G., Lee, J.-C., and Safari, A., J. Apply. Phys. 76, 2999 (1994).Google Scholar
[7] Hou, S.Y., Kwo, J., Watts, R.K., Werder, D.J., Shmulovich, J., and O'Bryan, H.M., Mat. Res. Soc. Symp. Proc. 343, 1994, pp. 457–462.Google Scholar
[8] Eom, C.B., Cava, R.J., Fleming, R.M., Phillips, J.M., van Dover, R.B., Marshall, J.H., Hsu, J.W.P., Krajewski, J.J., Peck, W.F. Jr, Science 258, 1766 (1992).Google Scholar
[9] Fork, D.K., Fenner, D.B., Connell, G.A.N., Phillips, J.M., and Geballe, T.H.. Appl. Phys. Lett. 57, 1137 (1990).Google Scholar
[10] Eom, C.B., van Dover, R.B., Phillips, J.M., Werder, D.J., Marshall, J.H., Chen, C.H., Cava, R.J., and Fleming, R.M., Appl. Phys. Lett. 63, 2570 (1993).Google Scholar
[11] Budai, J.D., Feenstra, R., and Boatner, L.A., Phys. Rev. B 39, 12355 (1989).Google Scholar
[12] Ghausi, M.S. and Kelley, J.J., Introduction to Distributed Parameter Networks, (Holt, Rinehart and Winston, New York), p. 20.Google Scholar