Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-17T16:14:10.708Z Has data issue: false hasContentIssue false
  • English
  • Français

Heteroepitaxial Growih and Characterization of Titanium Films on Alpha (6H) Silicon Carbide

Published online by Cambridge University Press:  25 February 2011

L.M. Spellman ,
R.C. Glass ,
R.F. Davis ,
T.P. Humphreys ,
Hyeongtag Jeon ,
R.J. Nemanich ,
Sopa Chevacharoenkul  and
N.R. Parikh
L.M. Spellman
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
R.C. Glass
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
R.F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
T.P. Humphreys
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
Hyeongtag Jeon
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
R.J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
Sopa Chevacharoenkul
Affiliation:
MCNC, Center for Microelectronics, P.O. Box 12889, Research Triangle Park, NC 27709
N.R. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255
Get access

Abstract

In the present study we report the first results pertaining to the heteroepitaxial growth of Ti films on 6H-SiC (0001). The Ti epitaxial films of typically 400–1000 Å thickness have been deposited at room temperature in ultra-high vacuum (< 10−9 torr) using both thermal and electron beam evaporation sources. In-vacuo techniques of low energy electron diffraction (LEED) and x-ray photoelectron spectroscopy (XPS) have been used to monitor the surface structure and interface chemistry during growth. An unreconstructed (1×1) ordered LEED pattern corresponding to that of the SiC (0001) surface was observed for all Ti coverages. Epitaxial growth of Ti has been confirmed from cross-sectional TEM diffraction patterns and images, which indicate the presence of threading dislocations to relieve a 4% lattice mismatch strain. Rutherford backscattering (RBS) with channeling of 2 MeV He+ ions gave X = 0.71 for Ti deposited at room temperature. Current-voltage measurement for both un-annealed and annealed Ti contacts displayed rectifying characteristics with low leakage currents (≈, 6 nA at −10V) and low ideality factors (1.02–1.08).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 99
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Pelletier, J., Gervais, D., and Pomot, C., J. Appl. Phys. Lett. 64, 2672 (1988).Google Scholar
[2] Waldrop, J.R. and Grant, R.W., Appl. Phys. 55, 432 (1984).Google Scholar
[3] Bauer, E.G. et al. , J. Mater. Res., 5 (4), 852 (1990).Google Scholar
[4] Rahaman, M.N., Bioteau, Y., and Jonghe, L.C. De, Am. Ceram. Soc. Bull. 65, 1171 (1986).Google Scholar
[5] Rahaman, M.N. and Jonghe, L.C. De, Am. Ceram. Soc. Bull. 66, 782 (1987).Google Scholar
[6] Taylor, T.N.. J. Mater. Res. 4, 189 (1989).Google Scholar
[7] Wagner, C.D., Riggs, W.M., Davis, L.E., Moulder, J.F., and Muilenberg, G.E., Handbook of X-ray Photoelectron Spectroscopy (Physical Electronics Division, Perkin-Elmer Corp., Eden Prairie, MN, 1979), p. 9.Google Scholar
[8] Lane, J.E., Carter, C.H., More, K.L., and Davis, R.F., J. Mater. Res. 1, 737 (1986).Google Scholar
[9] Rhoderick, E.H. and Williams, R.H. in Metal-Semiconductor Contacts, 2nd Ed. (Oxford University, New York, 1988), p. 39.Google Scholar
[10] Backhaus-Ricoult, M., Acta-Scripta Met. Proc., 4, 79 (1989).Google Scholar