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Heteroepitaxial Growih and Characterization of Titanium Films on Alpha (6H) Silicon Carbide

Published online by Cambridge University Press:  25 February 2011

L.M. Spellman ,
R.C. Glass ,
R.F. Davis ,
T.P. Humphreys ,
Hyeongtag Jeon ,
R.J. Nemanich ,
Sopa Chevacharoenkul  and
N.R. Parikh
L.M. Spellman
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
R.C. Glass
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
R.F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
T.P. Humphreys
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
Hyeongtag Jeon
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
R.J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
Sopa Chevacharoenkul
Affiliation:
MCNC, Center for Microelectronics, P.O. Box 12889, Research Triangle Park, NC 27709
N.R. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255
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Abstract

In the present study we report the first results pertaining to the heteroepitaxial growth of Ti films on 6H-SiC (0001). The Ti epitaxial films of typically 400–1000 Å thickness have been deposited at room temperature in ultra-high vacuum (< 10−9 torr) using both thermal and electron beam evaporation sources. In-vacuo techniques of low energy electron diffraction (LEED) and x-ray photoelectron spectroscopy (XPS) have been used to monitor the surface structure and interface chemistry during growth. An unreconstructed (1×1) ordered LEED pattern corresponding to that of the SiC (0001) surface was observed for all Ti coverages. Epitaxial growth of Ti has been confirmed from cross-sectional TEM diffraction patterns and images, which indicate the presence of threading dislocations to relieve a 4% lattice mismatch strain. Rutherford backscattering (RBS) with channeling of 2 MeV He+ ions gave X = 0.71 for Ti deposited at room temperature. Current-voltage measurement for both un-annealed and annealed Ti contacts displayed rectifying characteristics with low leakage currents (≈, 6 nA at −10V) and low ideality factors (1.02–1.08).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 99
Copyright
Copyright © Materials Research Society 1991

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References

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