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Heating Effects on The Young's Modulus of Films Sputtered onto Micromachined Resonators

Published online by Cambridge University Press:  10 February 2011

H. Kahn
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106
M.A. Huff
Affiliation:
Department of Electrical Engineering and Applied Physics, Case Western Reserve University, Cleveland, OH 44106
A.H. Heuer
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106
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Abstract

Surface-micromachined polysilicon lateral resonant structures were fabricated and used to determine the temperature dependence of the Young's modulus of the polysilicon. This is done by passing a dc current through the beams during resonance testing, resulting in Joule-heating. The temperatures are calibrated by increasing the dc current until the melting point of silicon is attained. The calculated Young's moduli agree well with reported values for single crystal silicon.

In addition, metal films were sputter-deposited onto the polysilicon resonators, and similar experiments performed on the composite devices to determine the temperature dependence of the modulus of the sputtered films. Ni films demonstrate a linear decrease in Young's modulus with temperature. TiNi films demonstrate two distinct modulus values with an intermediate transition region, due to the temperature-induced reversible phase transformation exhibited by TiNi.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

[1] Tang, W.C., Nguyen, T.-C. H., and Howe, R.T., Sensors and Actuators, 20, 25 (1989).Google Scholar
[2] Pratt, R.I., Johnson, G.C., Howe, R.T., and Chang, J.C., Proc. of the IEEE Intl. Conf. on Solid-State Sensors and Actuators, Transducers 91, 205 (1991).Google Scholar
[3] Kahn, H., Stemmer, S., Nandakumar, K., Heuer, A.H., Mullen, R.L., Ballarini, R., and Huff, M.A., Proc. of the IEEE Micro Electro Mechanical Systems Workshop, MEMS 96, 343 (1996).Google Scholar
[4] Biebl, M., Brandl, G., and Howe, R.T., Proc. of the IEEE Intl. Conf. on Solid-State Sensors and Actuators, Transducers 95, 80 (1995).Google Scholar
[5] Fleischman, A.J., Roy, S., Zorman, C.A., and Mehregany, M., Proc. of the Intl. Conf. on Silicon Carbide, III-Nitrides, and Related Matls., ICSCIII-N 97 (1997).Google Scholar
[6] Wang, K., Wong, A.-C., Hsu, W.-T., and Nguyen, C. T.-C., Proc. of the IEEE Intl. Conf. on Solid-State Sensors and Actuators, Transducers 97, 109 (1997).Google Scholar
[7] Yasseen, A.A., Mourlas, N.J., and Mehregany, M., J Electrochem Soc., 144, 237 (1997).Google Scholar
[8] Houston, M.R., Maboudian, R., and Howe, R.T., Proc. of the IEEE Intl. Conf. on Solid-State Sensors and Actuators, Transducers 95, 210 (1995).Google Scholar
[9] Burenkov, Y.A. and Nikanorov, S.P., Sov. Phys. Solid State, 16, 963 (1974).Google Scholar
[10] Simmons, G. and Wang, H., Single Crystal Elastic Constants and Calculated Aggregate Properties: A Handbook, 2nd ed. (The M.I.T. Press, Cambridge, MA, 1971), pp. 224226.Google Scholar
[11] Kahn, H., Huff, M.A., and Heuer, A.H., J. Micromechanics and Microengineering, in press (1998).Google Scholar
[12] Su, Q., Hua, S.Z., and Wuttig, M., J. Alloys and Compounds, 211/212, 460 (1994).Google Scholar