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Heat Transfer in Laser Annealing of Semiconductor Films

Published online by Cambridge University Press:  28 February 2011

C. P. CriGoropoulos ,
X. Xu ,
S. L. Taylor  and
H. K. Park
C. P. CriGoropoulos
Affiliation:
Department of Mechanical Engineering, University of California, Berkeley, CA 94720, USA.
X. Xu
Affiliation:
Department of Mechanical Engineering, University of California, Berkeley, CA 94720, USA.
S. L. Taylor
Affiliation:
Department of Mechanical Engineering, University of California, Berkeley, CA 94720, USA.
H. K. Park
Affiliation:
Department of Mechanical Engineering, University of California, Berkeley, CA 94720, USA.
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Abstract

Melting and solidification of a silicon film by continuous wave laser beam irradiation has been studied. The silicon film melting and recrystallization is controlled by the temperature distribution in the semiconductor. Calculations have been carried out for a range of laser beam parameters and material translational speeds. The results for the melt pool size have been compared with experimental data. The temperature field development has also been monitored with localized transient reflectivity measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 95
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Celler, G.K., G. K., , J. Crystal Growth, 63, 429, (1983).Google Scholar
[2] Tsaur, B. Y. in Proceedings of Materials Research Society, edited by Chiang, A. et al., (MRS, Pittsburgh, PA, 53, 1986) pp. 365–373.Google Scholar
[3] Kubota, K., Hunt, C. E., and Frey, J., Appl. Phys. Lett., 46, 12, 139, (1986).Google Scholar
[4] Grigoropoulos, C. P., Buckholz, R. H., and Domoto, G. A., J. Appl. Phys., 60, 7, 2304, (1986).Google Scholar
[5] Shamsundar, N., Sparrow, E.M., ASME J. Heat Transfer, 98, 551, (1975).Google Scholar
[6] Grigoropoulos, C.P., Dutcher, W.E., and Emery, A.F., ASME J. Heat Transfer, 113, 21, (1991).CrossRefGoogle Scholar
[7] Rostami, A.A., and Grigoropoulos, C.P., presented at the ASME Winter Annual Meeting, Atlanta, GA, 1991.Google Scholar
[8] Grigoropoulos, C.P., Dutcher, W.E., and Barclay, K.E., ASME J. Heat Transfer, 113, 657, (1991).Google Scholar
[9] Born, M., and Wolf, E., Principles of Optics, 6th ed., (Pergamon, United Kingdom, 1970), p.55, p. 611.Google Scholar
[10] Ozisik, M.N., Heat Conduction, (John Wiley and Sons, 1980), p. 397.Google Scholar
[11] Touloukian, Y.S., Thermophysical Properties of Matter. Thermal Conductivities, (IFI/Plenum, New York, 1970).Google Scholar
[12] Bosch, M.A., and Lemons, R.A., Phys. Rev. Lett., 47, 16, 1151, (1981).Google Scholar
[13] Grigoropoulos, C.P., Buckholz, R.H., and Domoto, G.A., ASME J. Heat Transfer, 110, 416, (1988).Google Scholar
[14] Jackson, K.A., and Kurtze, D.A., J. Crystal Growth, 71, 385, (1985).Google Scholar
[15] Grigoropoulos, C.P., Buckholz, R.H., and Domoto, G.A., ASME J. Heat Transfer, 109, 841, (1987).Google Scholar
[16] Jellison, G.E., and Burke, H.H., J. Appl. Phys., 60, 2, 841, (1986).Google Scholar
[17] Shvarev, K.M., Baum, B.A., and Gel'd, P.V., Sov. Phys. Solid State, 16, 11, 2111, (1975).Google Scholar
[18] Bagley, B.G., Aspnes, D.E., Adams, A.C., and Mogab, C.J., Appl. Phys. Lett., 38, 1, 56, (1981).Google Scholar