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HCL Oxidation of High Dose Arsenic Implanted Silicon

Published online by Cambridge University Press:  26 February 2011

Seong Soo Choi ,
M. Z. Numan ,
T. G. Finstad ,
W. K. Chu  and
D. Fathy
Seong Soo Choi
Affiliation:
University of North Carolina, Dept. of Physics and Astronomy, Phillips Hall 039 A, Chapel Hill, NC 27514
M. Z. Numan
Affiliation:
University of North Carolina, Dept. of Physics and Astronomy, Phillips Hall 039 A, Chapel Hill, NC 27514
T. G. Finstad
Affiliation:
Institute of Physics, University of Oslo, Box 1048 Blindern, 0316 Oslo 3 Norway
W. K. Chu
Affiliation:
University of North Carolina, Dept. of Physics and Astronomy, Phillips Hall 039 A, Chapel Hill, NC 27514
D. Fathy
Affiliation:
Microelectronics Center of North Carolina, Research Triangle Park, NC 27709
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Abstract

Thermal oxidation of high dose arsenic implanted p-type <100> silicon has been performed in order to study arsenic snowplowing. Bubble pattern formation and local oxide bowing (mound) in relation to the arsenic concentration in silicon as well as an HC1 ambient have been observed for an oxidation temperature of 1050°C. Oxide peel off at an oxidation temperature of 950°C for an atmosphere with an HC1 ambient has been observed. In addition, an anomaly in the temperature dependence of the oxidation rate independent of an HC1 ambient has been found.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 567
Copyright
Copyright © Materials Research Society 1986

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References

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