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Hall-Effect Studies on Microcrystalline Silicon with Different Structural Composition and Doping

Published online by Cambridge University Press:  15 February 2011

U. Backhausen ,
R. Carius ,
F. Finger ,
P. Hapke ,
U. Zastrow  and
H. Wagner
U. Backhausen
Affiliation:
Forschungszentrum Jülich, ISI-PV, 52425-Jülich, Germany, [email protected]
R. Carius
Affiliation:
Forschungszentrum Jülich, ISI-PV, 52425-Jülich, Germany, [email protected]
F. Finger
Affiliation:
Forschungszentrum Jülich, ISI-PV, 52425-Jülich, Germany, [email protected]
P. Hapke
Affiliation:
Forschungszentrum Jülich, ISI-PV, 52425-Jülich, Germany, [email protected]
U. Zastrow
Affiliation:
Forschungszentrum Jülich, ISI-PV, 52425-Jülich, Germany, [email protected]
H. Wagner
Affiliation:
Forschungszentrum Jülich, ISI-PV, 52425-Jülich, Germany, [email protected]
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Abstract

Hall-effect experiments on <n>-type microcrystalline silicon samples with a wide range of structural composition and doping have been performed. For highly doped samples the conductivity Σ and the mobility μ show a non-singly activated behaviour while the carrier density is almost temperature independent. The comparison of the carrier density with the phosphorous concentration in conjunction with the conductivity gives strong evidence that the Hall-effect data have to be corrected with the crystalline volume fraction Xc. Furthermore, the increase of the mobility with Xc, which is linked in our case to the grain size, can be explained when the length of the transport paths is taken into account. Our results will be discussed in the framework of different transport models. It is concluded that transport in μc-Si:H can not be explained in terms of thermionic emission over barriers with a well defined barrier height; instead a distribution of barrier heights have to be considered. A transport model is suggested where μc-Si:H is viewed as an interconnected network.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 833
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1.Hapke, P., Backhausen, U., Carius, R., Finger, F. and Ray, S., in Amorphous Silicon Technology-1996, edited by Hack, M., Schiff, E.A., Wagner, S., Matsuda, A., Schropp, R. (Mater. Res. Soc. Proc. 420, Pittsburgh, PA, 1996), in press.Google Scholar
2.Seto, J.W., J. Appl. Phys. 46, 5247 (1975).Google Scholar
3.Luysberg, M., Hapke, P., Carius, R. and Finger, F., Phil. Mag. A (1996), in press.Google Scholar
4.Matsuda, A., J. Non-Crystalline Solids 59&60, 767 (1983).Google Scholar
5.Spear, W.E., Willeke, G., LeChomber, P.G. and Fitzgerald, A.G., J. de Phys. 42, C4–257 (1981).Google Scholar
6.Finger, F., Carius, R., Hapke, P., Houben, L., Luysberg, M. and Tzolov, M., 9th International School on Condensed Matter Physics, (Varna, Bulgaria, 1996), to be published by World Scientific.Google Scholar
7.Orton, J.W. and Powell, M.J., Rep. Prog. Phys. 43, 1263 (1980).Google Scholar
8.Willeke, G. in Amorphous & Microcrystalline Semiconductors Devices, Vol. 2, edited by Kanicki, J. (Artech House, Boston, London, 1992), 55.Google Scholar
9.Lucovsky, G. and Wang, C., in Microcrystalline Semiconductors: Material Science & Devices, edited by Fauchet, P., Tsai, C.C., Canham, L., Shimizu, I., Aoyagi, Y. (Mater. Res. Soc. Proc. 283, Pittsburgh, PA, 1992), pp. 443–454.Google Scholar
10.Nakata, M. and Shimizu, I., see book reference 9, pp. 591–596.Google Scholar
11.Finger, F., Malten, C., Hapke, P., Carius, R., Flückiger, R. and Wagner, H., Phil. Mag. Lett. 70, 247 (1994).Google Scholar
12.Di Nocera, A., Mittiga, A. and Rubino, A., J. Appl. Phys. 78, 3955 (1995).Google Scholar
13.Carius, R., Finger, F., Luysberg, M., Hapke, P. and Backhausen, U., see book reference 6.Google Scholar