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Hall Scattering Factor of Holes and Shallow Defect Centers in Aluminum-doped SiC

Published online by Cambridge University Press:  11 February 2011

Gerhard Pensl ,
Florin Ciobanu ,
Michael Krieger ,
Michael Laube ,
Sergey Reshanov ,
Frank Schmid ,
Günter Wagner ,
Hiroyuki Nagasawa  and
Adolf Schöner
Gerhard Pensl
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstraβe 7, DE-91058 Erlangen, Germany
Florin Ciobanu
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstraβe 7, DE-91058 Erlangen, Germany
Michael Krieger
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstraβe 7, DE-91058 Erlangen, Germany
Michael Laube
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstraβe 7, DE-91058 Erlangen, Germany
Sergey Reshanov
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstraβe 7, DE-91058 Erlangen, Germany
Frank Schmid
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstraβe 7, DE-91058 Erlangen, Germany
Günter Wagner
Affiliation:
Institute of Crystal Growth, Max-Born-Straβe 2, DE-12489 Berlin, Germany
Hiroyuki Nagasawa
Affiliation:
Hoya Advanced Semiconductor Technologies Co. Ltd., 1–17–16 Tanashioda, Sagamihara, Kanagawa 229–1125, Japan
Adolf Schöner
Affiliation:
ACREO AB, Electrum 236, Isafjordsgatan 22, SE-164 40 Kista-Stockholm, Sweden
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Abstract

The Hall scattering factor of holes rH,h(T) in 4H- and 6H-SiC is determined by comparing the temperature-dependent free hole concentration p(1/T) obtained from Hall effect and from the neutrality equation with defect parameters, which are independently determined by SIMS and C-V measurements. rH,h(T) strongly deviates from 1 and assumes values between 1.4 and 0.5 at temperatures ranging from 100K to 800K. rH,h(T) is identical for 4H-and 6H-SiC within the measurement uncertainty. Al-doped SiC epilayers of the 3C-, 4H- and 6H-polytype were investigated with admittance spectroscopy and DLTS prior to and subsequent to processing steps. Depending on the SiC polytype, a different number of shallow acceptors is observed, which are thermally stable up to high temperatures (1700°C).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K3.2
Copyright
Copyright © Materials Research Society 2003

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References

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