Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T18:39:04.732Z Has data issue: false hasContentIssue false
  • English
  • Français

Hall Effect Investigation of Doped and Undoped ßB-FESI2

Published online by Cambridge University Press:  15 February 2011

S. Brehme ,
L. Ivanenko ,
Y. Tomm ,
G.-U. Reinsperger ,
P. Staulß  and
H. Lange
S. Brehme
Affiliation:
Dept. A P, Hahn-Meitner-Institut Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany
L. Ivanenko
Affiliation:
Dept. A P, Hahn-Meitner-Institut Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany
Y. Tomm
Affiliation:
Dept. A P, Hahn-Meitner-Institut Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany
G.-U. Reinsperger
Affiliation:
Dept. A P, Hahn-Meitner-Institut Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany
P. Staulß
Affiliation:
Dept. A P, Hahn-Meitner-Institut Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany
H. Lange
Affiliation:
Dept. A P, Hahn-Meitner-Institut Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany
Get access

Abstract

Polycrystalline ß-FeSi2 layers prepared by codeposition of Si and Fe on cold and hot Si substrates and ß-FeSi2, crystals grown by chemical vapor transport were investigated. Resistivity and Hall effect measurements revealed the p-type conductivity of undoped material and the influence of some dopants of the iron group. The activation energy of a Cr-related acceptor was determined to about 85 meV. The mobility data were found to depend significantly on the purity of the preparation process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 355
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] For a review see Känel, H. von, Kafader, U., Sutter, P., Onda, N., Sirringhaus, H., Müller, E. Kroll, U., Schwarz, C., and Goncalves-Conto, S., in Silicides. Germanides. and Their Interfaces, edited by Fathauer, R. W., Mantl, S., Schowalter, L. J., and Tu, K. N. (Mat. Res. Soc. Symp. Proc. Vol.320, Pittsburgh, PA, 1994), p. 73–84.Google Scholar
[2] Tomm, Y., Ivanenko, L., Irmscher, K., Brehme, S., Henrion, W., Sieber, I., and Lange, H., Proc. E-MRS Spring Meeting, Strafburg 95, to be published in Thin Solid FilmsGoogle Scholar
[3] Arushanov, E., Kloc, Ch., and Bucher, E., Phys. Rev. B 50, 2653 (1994)Google Scholar
[4] Rizzi, A., Rösen, B. N. E., Freundt, D., Dieker, Ch., and Lüth, H., Phys. Rev. B 51, 17780 (1995).Google Scholar
[5] Lou, L. F., and Frye, W. H., J. Appl. Phys. 56, 2253 (1984).Google Scholar
[6] Birkholz, U. and Schelm, J., phys. Stat. Sol. 27, 413 (1968).Google Scholar
[7] Hayashibara, M., and Oda, M., Proc. XII. Int Conf. Thermoel. Yokohama 1993, edited by Matsuura, K., Tokyo 1994.Google Scholar
[8] Valassiades, O., Dimitriades, C. A., and Werner, J. H., J. Appl. Phys. 70, 890 (1991).Google Scholar
[9] Teichert, S., personal communicationGoogle Scholar
[10] Arushanov, E., Kloc, Ch., Hohi, H., and Bucher, E., J. Appl. Phys. 75, 5106 (1994).Google Scholar
[ 11] Sze, S. M., Physics of Semiconductor Devices, J. Wiley & Sons, New York 1981, p. 25 Google Scholar